Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices

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Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices

In recent years, the use of porous semiconductor has become an alternative way in reducing the impact of lattice mismatch and propagation of threading dislocations into the overgrown layer. Porous GaN materials have been considered as one of the most promising materials for optoelectronic applica...

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Bibliographic Details
Main Authors:	Samsudin, M. E. A., Zainal, N., Hassan, Z.
Format:	Conference or Workshop Item
Language:	English
Published:	2015
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48738/ http://eprints.usm.my/48738/1/Section%20C%20159.pdf%20cut.pdf

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