Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices
In recent years, the use of porous semiconductor has become an alternative way in reducing the impact of lattice mismatch and propagation of threading dislocations into the overgrown layer. Porous GaN materials have been considered as one of the most promising materials for optoelectronic applica...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48738/ http://eprints.usm.my/48738/1/Section%20C%20159.pdf%20cut.pdf |
| Summary: | In recent years, the use of porous semiconductor has become an alternative way in reducing the
impact of lattice mismatch and propagation of threading dislocations into the overgrown layer. Porous
GaN materials have been considered as one of the most promising materials for optoelectronic
applications owing to their unique optical and electronic properties. Such materials exhibit efficient
luminescence, good suppression of threading dislocations and strain which subsequently high-quality
and stress-free GaN layer could be develop. The fabrication of porous GaN is typically prepared using
top-down approach, for example through electrochemical etching. However, such technique is
commonly damaging the surface structure of the GaN as well as giving high possibility to formation of
non-stoichiometric condition on the surface. Here, we demonstrate the fabrication of porous GaN layer
on porous Si substrate via electron beam evaporator (e-beam). Towards the end, the best porous GaN
is proposed. |
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