Characteristics of p-Cu20/n-GaN Heterojunction Prepared via Reactive Radio Frequency Magnetron Sputtering

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Characteristics of p-Cu20/n-GaN Heterojunction Prepared via Reactive Radio Frequency Magnetron Sputtering

In this work, p-type cuprous oxide (Cu20) thin films were deposited on n-type gallium nitride (GaN) by radio frequency (RF) magnetron sputtering. The target used for deposition Cu20 films was 3 inch diameter solid copper target with purity of 99.99%. The reactive sputtering was performed in a mixtu...

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Bibliographic Details
Main Authors:	Ooi, P. K., Ng, S. S., Abdullah, M. J.
Format:	Conference or Workshop Item
Language:	English
Published:	2015
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48736/ http://eprints.usm.my/48736/1/Section%20C%20158.pdf%20cut.pdf

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