Growth of n-ZnOnanorods on p-GaN using an Aqueous Solution Method
Wide band gap semiconductors like GaN and ZnO have high electron mobility and wide band gap energy. Zinc oxide (ZnO)nanorod arrays are grown on a seed-layer ZnO/GaN l sapphire substrate using a wet chemical bath deposition method. Chemical solution deposition is a low-temperature and possibly the lo...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
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2015
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| Online Access: | http://eprints.usm.my/48732/ http://eprints.usm.my/48732/1/Section%20C%20154-2.pdf%20cut.pdf |
| _version_ | 1848881238124789760 |
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| author | Mohammad, Sabah M. Hassan, Z. Ahmed, Naser M. |
| author_facet | Mohammad, Sabah M. Hassan, Z. Ahmed, Naser M. |
| author_sort | Mohammad, Sabah M. |
| building | USM Institutional Repository |
| collection | Online Access |
| description | Wide band gap semiconductors like GaN and ZnO have high electron mobility and wide band gap energy. Zinc oxide (ZnO)nanorod arrays are grown on a seed-layer ZnO/GaN l sapphire substrate using a wet chemical bath deposition method. Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnOnanorods on a GaN substrate. Field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) measurements were used to examine the morphology, phase growth orientation and the structure of the ZnOnanorods and the GaN thin film. Optical property of the as-grown ZnOnanorodsand the GaN thin film was analyzed by room temperature photoluminescence measurements. The synthesis of vertically well-aligned nZnOnanorods on p-GaN film with large aspect ratio, high optical quality, and high density can be very useful for fabricating nanoelectronic and nano-optical devices. |
| first_indexed | 2025-11-15T18:15:50Z |
| format | Conference or Workshop Item |
| id | usm-48732 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:15:50Z |
| publishDate | 2015 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-487322021-03-31T04:12:26Z http://eprints.usm.my/48732/ Growth of n-ZnOnanorods on p-GaN using an Aqueous Solution Method Mohammad, Sabah M. Hassan, Z. Ahmed, Naser M. QC1-999 Physics Wide band gap semiconductors like GaN and ZnO have high electron mobility and wide band gap energy. Zinc oxide (ZnO)nanorod arrays are grown on a seed-layer ZnO/GaN l sapphire substrate using a wet chemical bath deposition method. Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnOnanorods on a GaN substrate. Field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) measurements were used to examine the morphology, phase growth orientation and the structure of the ZnOnanorods and the GaN thin film. Optical property of the as-grown ZnOnanorodsand the GaN thin film was analyzed by room temperature photoluminescence measurements. The synthesis of vertically well-aligned nZnOnanorods on p-GaN film with large aspect ratio, high optical quality, and high density can be very useful for fabricating nanoelectronic and nano-optical devices. 2015-06 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48732/1/Section%20C%20154-2.pdf%20cut.pdf Mohammad, Sabah M. and Hassan, Z. and Ahmed, Naser M. (2015) Growth of n-ZnOnanorods on p-GaN using an Aqueous Solution Method. In: Meeting of Malaysia Nitrides Research Group. |
| spellingShingle | QC1-999 Physics Mohammad, Sabah M. Hassan, Z. Ahmed, Naser M. Growth of n-ZnOnanorods on p-GaN using an Aqueous Solution Method |
| title | Growth of n-ZnOnanorods on p-GaN using an Aqueous Solution Method |
| title_full | Growth of n-ZnOnanorods on p-GaN using an Aqueous Solution Method |
| title_fullStr | Growth of n-ZnOnanorods on p-GaN using an Aqueous Solution Method |
| title_full_unstemmed | Growth of n-ZnOnanorods on p-GaN using an Aqueous Solution Method |
| title_short | Growth of n-ZnOnanorods on p-GaN using an Aqueous Solution Method |
| title_sort | growth of n-znonanorods on p-gan using an aqueous solution method |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48732/ http://eprints.usm.my/48732/1/Section%20C%20154-2.pdf%20cut.pdf |