Preliminary Studies of InGaON Thin Film on Si Substrate Using Simple Growth Technique

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Preliminary Studies of InGaON Thin Film on Si Substrate Using Simple Growth Technique

In this paper, we present a simple growth setup which is able to grow indium gallium oxynitride (lnGaON). This setup only involves furnace, ammonia gas, as well as gallium (Ga) and indium (In) sources. The characterization results heavily implied the growth of lnGaON on silicon (Si) substrate. Fi...

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Bibliographic Details
Main Authors:	Tneh, S.S., Beh, K.P., Yam, F.K., Ng, S.W., Lee, S.C., Ng, S.S., Hassan, Z.
Format:	Conference or Workshop Item
Language:	English
Published:	2015
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/48435/ http://eprints.usm.my/48435/1/Section%20C%20153.pdf%20cut.pdf

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