Analytical Modelling Of Breakdown
Effect In Graphene Nanoribbon Field
Effect Transistor

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Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor

Since 2004, graphene as transistor channel has drawn huge amount of attention due to its extraordinary scalability and high carrier mobility. In order to open required bandgap, its nanoribbon form is used in transistors. Breakdown effect modelling of the graphene nanoribbon field effect transistors...

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Bibliographic Details
Main Author:	Mahdiar, Hosseinghadiry
Format:	Thesis
Language:	English
Published:	2014
Subjects:	TK1-9971 Electrical engineering. Electronics. Nuclear engineering
Online Access:	http://eprints.usm.my/46146/ http://eprints.usm.my/46146/1/Mahdiar%20Hosseinghadiry24.pdf

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