Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application

In this work, growth of indium aluminum nitride (InAlN) film was studied on different substrates by using reactive magnetron co-sputtering technique. The study was mainly focused to grow In-rich InAlN film on p-type Si (111) substrate with improved physical properties. The structural properties of I...

Full description

Bibliographic Details
Main Author: Afzal, Naveed
Format: Thesis
Language:English
Published: 2017
Subjects:
Online Access:http://eprints.usm.my/45432/
http://eprints.usm.my/45432/1/NAVEED%20AFZAL.pdf
_version_ 1848880330174365696
author Afzal, Naveed
author_facet Afzal, Naveed
author_sort Afzal, Naveed
building USM Institutional Repository
collection Online Access
description In this work, growth of indium aluminum nitride (InAlN) film was studied on different substrates by using reactive magnetron co-sputtering technique. The study was mainly focused to grow In-rich InAlN film on p-type Si (111) substrate with improved physical properties. The structural properties of InAlN were investigated through X-ray diffraction (XRD) analysis, surface properties were studied through field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) whereas the electrical properties were examined by taking Hall measurements and current-voltage (I-V) characteristics of the films. The band gap of InAlN was estimated through UV-Vis reflectance spectroscopy.
first_indexed 2025-11-15T18:01:24Z
format Thesis
id usm-45432
institution Universiti Sains Malaysia
institution_category Local University
language English
last_indexed 2025-11-15T18:01:24Z
publishDate 2017
recordtype eprints
repository_type Digital Repository
spelling usm-454322019-09-17T02:42:07Z http://eprints.usm.my/45432/ Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application Afzal, Naveed QC1-999 Physics In this work, growth of indium aluminum nitride (InAlN) film was studied on different substrates by using reactive magnetron co-sputtering technique. The study was mainly focused to grow In-rich InAlN film on p-type Si (111) substrate with improved physical properties. The structural properties of InAlN were investigated through X-ray diffraction (XRD) analysis, surface properties were studied through field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) whereas the electrical properties were examined by taking Hall measurements and current-voltage (I-V) characteristics of the films. The band gap of InAlN was estimated through UV-Vis reflectance spectroscopy. 2017-02 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/45432/1/NAVEED%20AFZAL.pdf Afzal, Naveed (2017) Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application. PhD thesis, Universiti Sains Malaysia.
spellingShingle QC1-999 Physics
Afzal, Naveed
Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application
title Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application
title_full Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application
title_fullStr Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application
title_full_unstemmed Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application
title_short Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application
title_sort fabrication and characterizations of magnetron co-sputtered inain films for photodetectors application
topic QC1-999 Physics
url http://eprints.usm.my/45432/
http://eprints.usm.my/45432/1/NAVEED%20AFZAL.pdf