Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector

QR Code

Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector

This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work w...

Full description

Bibliographic Details
Main Author:	Kamarulzaman, Azharul Ariff
Format:	Thesis
Language:	English
Published:	2017
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/42902/ http://eprints.usm.my/42902/1/AZHARUL_ARIFF__KAMARULZAMAN.pdf

Similar Items

Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
by: Kamarulzaman, Azharul Ariff
Published: (2017)

Potential of polycrystalline GaN deposited by electron beam evaporator for metal-semiconductor-metal {MSM) photodetector device
by: Ariff, A., et al.
Published: (2017)

Optimization of Post-Annealing Treatment Conditions on GaN Layer Grown on m-Plane Sapphire Substrate by Electron Beam Evaporator
by: Ariff, A., et al.
Published: (2015)

Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD
by: Wei-Ching Huang,, et al.
Published: (2013)

Light absorption and reflection in nanostructured GaAs metal-semiconductor-metal photodetectors
by: Das, Narottam, et al.
Published: (2014)

High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors
by: Karar, A., et al.
Published: (2011)

Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate
by: Taib, Muhamad Ikram Md, et al.
Published: (2020)

Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate
by: Taib, Muhamad Ikram Md, et al.
Published: (2020)

Growth of semi-polar (11-22) GaN epitaxial layer on M-plane sapphire via MOCVD / Mohd Afiq Anuar
by: Mohd Afiq , Anuar
Published: (2020)

TEM assessment of As-doped GaN epitaxial layers grown on sapphire
by: Fay, Mike W., et al.
Published: (2004)

Crystal quality enhancement of semi-polar (11 22) InGaN/GaN-based LED grown on M-Plane sapphire substrate via MOCVD / Omar Ayad Fadhil
by: Omar Ayad , Fadhil
Published: (2019)

Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai
by: Sivanathan , Pariasamy @ Chelladurai
Published: (2018)

Metal-semiconductor-metal (MSM) photodetectors with plasmonic nanogratings
by: Das, Narottam, et al.
Published: (2011)

A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
by: Hussein, Asaad Shakir
Published: (2011)

An Investigation Of GaN Thin Films On Ain Sapphire Substrate By Sol-Gel Spin Coating Method
by: Amin, NurFahana Mohd, et al.
Published: (2016)

Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate
by: Jiang, Jie’an, et al.
Published: (2019)

Photoelectric properties of metal-semiconductor-metal photodetector based on porous silicon
by: Al-Jumaili, Batool Eneaze Bandar, et al.
Published: (2016)

Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors
by: Sarmast, Hadi Mahmodi Sheikh
Published: (2010)

Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition
by: Rais, Shamsul Amir Abdul, et al.

The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor
by: Mohamad, Mazuina, et al.
Published: (2008)

High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN
by: Liu, Lei, et al.
Published: (2017)

Improvement in Opto-Electrical Properties of GaN MSM Photodetector by Contact Work-Function Selection
by: Ariff, F. A., et al.
Published: (2016)

Numerical modeling of the temporal response of back-gated metal-semiconductor-metal photodetector in an equilibrium condition
by: Habibpour, A., et al.
Published: (2014)

Enhancement Of Efficiency Of GaN-On-GaN Led By Wet Etching Roughening On N-Face GaN Substrate
by: Alias, Ezzah A., et al.
Published: (2020)

Optimization of AlN/GaN strained-layer superlattice for GaN epitaxy on Si(111) substrate / Yusnizam Yusuf
by: Yusnizam, Yusuf
Published: (2017)

Comparison of different plasmonic nanograting profiles for quality light absorption in nanostructured metal-semiconductor-metal photodetectors
by: Masouleh, F., et al.
Published: (2013)

Impact of Nanograting Phase-Shift on Light Absorption Enhancement in Plasmonics-Based Metal-Semiconductor-Metal Photodetectors
by: Das, Narottam, et al.
Published: (2011)

Enhancement Of Efficiency Of GaN-on-GaN LED By Wet Etching Roughening On N-Face Gan Substrate
by: Alias, Ezzah A., et al.
Published: (2020)

The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.
by: C, W Chin, et al.
Published: (2007)

Optimal subwavelength design for efficient light trapping in central slit of plasmonics-based metal-semiconductor-metal photodetector
by: Masouleh, F., et al.
Published: (2015)

The influence of temperature on the electrical conductivity of GaN piezoelectric semiconductors
by: Qiao, Y., et al.
Published: (2023)

Properties of Strain in GaN Layer Grown on Si (100) Substrate and Its Porous Structure
by: Waheeda, S. N., et al.
Published: (2015)

Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire
by: Song, T. L.
Published: (2005)

Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire
by: Beardsley, R.P., et al.
Published: (2016)

Enhancing Performance of Porous Si-Doped GaN based MSM Photodetector Using AC Technique
by: Mahmood, Ainorkhilah, et al.
Published: (2017)

Electric field-induced toughening in GaN piezoelectric semiconductor ceramics
by: Qin, G., et al.
Published: (2019)

Electric current dependent fracture in GaN piezoelectric semiconductor ceramics
by: Qin, G., et al.
Published: (2018)

PA-MBE GaN-Based Optoelectronics on Silicon Substrates
by: Chuah , Lee Siang
Published: (2009)

Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.
by: Zainal, Norzaini
Published: (2016)

High Sensitivity of Porous Si-Doped GaN MSM Photodetector using Thermally Untreated Platinum Contact
by: Mahmood, Ainorkhilah, et al.
Published: (2015)