DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application

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DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application

Gallium nitride is a promising wide bandgap semiconductor material for high-power, high temperature and high frequency device applications. However, there are still a number of factors that are limiting the material to reach a satisfactory device performance. Among them the most important and critic...

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Bibliographic Details
Main Author:	Munir, Tariq
Format:	Thesis
Language:	English
Published:	2011
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/42797/ http://eprints.usm.my/42797/1/TARIQ_MUNIR.pdf

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