Development Of Spacer Free Self-Aligned Contact Implantation For Power Devices

Mengoptimasi skema proses integrasi bagi sesebuah teknolgi merupakan salah satu faktor penting untuk mengurangkan bilangan kecatatan dan kitaran masa dalam bidang fabrikasi wafer. Dalam pengajian sarjana ini, aliran proses yang dioptimasi bagi menjajarkan penimpalan kontak telah dikaji bagi teknolog...

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Main Author: Poobalan, Banu
Format: Thesis
Language:English
Published: 2009
Subjects:
Online Access:http://eprints.usm.my/41784/
http://eprints.usm.my/41784/1/Banu_AP_Poobalan24.pdf
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author Poobalan, Banu
author_facet Poobalan, Banu
author_sort Poobalan, Banu
building USM Institutional Repository
collection Online Access
description Mengoptimasi skema proses integrasi bagi sesebuah teknolgi merupakan salah satu faktor penting untuk mengurangkan bilangan kecatatan dan kitaran masa dalam bidang fabrikasi wafer. Dalam pengajian sarjana ini, aliran proses yang dioptimasi bagi menjajarkan penimpalan kontak telah dikaji bagi teknologi Infineoen CoolMOS. Selepas mengaji 3 idea yang berlainan dengan insentif, konsep yang paling berpotensi tinggi dipilih bagi pengoptimasian dan pencirian lanjutan di peringkat wafer dan poduk. Optimization of the process integration scheme for a technology is one of the key factors within wafer fabrication in order to reduce defect density and production cycle time. Within this master study, an optimized process flow for the self-aligned contact implantation was evaluated for the Infineons CoolMOS technology. After intensive feasibility investigations of 3 different ideas, the most promising concept was further optimized and characterized on wafer level as well as in the final product.
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institution Universiti Sains Malaysia
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language English
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publishDate 2009
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spelling usm-417842019-04-12T05:27:00Z http://eprints.usm.my/41784/ Development Of Spacer Free Self-Aligned Contact Implantation For Power Devices Poobalan, Banu TN1-997 Mining engineering. Metallurgy Mengoptimasi skema proses integrasi bagi sesebuah teknolgi merupakan salah satu faktor penting untuk mengurangkan bilangan kecatatan dan kitaran masa dalam bidang fabrikasi wafer. Dalam pengajian sarjana ini, aliran proses yang dioptimasi bagi menjajarkan penimpalan kontak telah dikaji bagi teknologi Infineoen CoolMOS. Selepas mengaji 3 idea yang berlainan dengan insentif, konsep yang paling berpotensi tinggi dipilih bagi pengoptimasian dan pencirian lanjutan di peringkat wafer dan poduk. Optimization of the process integration scheme for a technology is one of the key factors within wafer fabrication in order to reduce defect density and production cycle time. Within this master study, an optimized process flow for the self-aligned contact implantation was evaluated for the Infineons CoolMOS technology. After intensive feasibility investigations of 3 different ideas, the most promising concept was further optimized and characterized on wafer level as well as in the final product. 2009-11 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/41784/1/Banu_AP_Poobalan24.pdf Poobalan, Banu (2009) Development Of Spacer Free Self-Aligned Contact Implantation For Power Devices. Masters thesis, Universiti Sains Malaysia.
spellingShingle TN1-997 Mining engineering. Metallurgy
Poobalan, Banu
Development Of Spacer Free Self-Aligned Contact Implantation For Power Devices
title Development Of Spacer Free Self-Aligned Contact Implantation For Power Devices
title_full Development Of Spacer Free Self-Aligned Contact Implantation For Power Devices
title_fullStr Development Of Spacer Free Self-Aligned Contact Implantation For Power Devices
title_full_unstemmed Development Of Spacer Free Self-Aligned Contact Implantation For Power Devices
title_short Development Of Spacer Free Self-Aligned Contact Implantation For Power Devices
title_sort development of spacer free self-aligned contact implantation for power devices
topic TN1-997 Mining engineering. Metallurgy
url http://eprints.usm.my/41784/
http://eprints.usm.my/41784/1/Banu_AP_Poobalan24.pdf