Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography

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Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography

Silicon nanowire transistor (SiNWT) has been successfully fabricated by atomic force microscopy (AFM) lithography through wet etching process. The silicon on insulator (SOI) <100> wafer was used as a starting material. Prior to use, the SOI wafer was cleaned by using ammonium hydroxide (NH4OH)...

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Bibliographic Details
Main Author:	Abdullah, Ahmad Makarimi
Format:	Thesis
Language:	English
Published:	2012
Subjects:	TN1-997 Mining engineering. Metallurgy
Online Access:	http://eprints.usm.my/41348/ http://eprints.usm.my/41348/1/AHMAD_MAKARIMI_ABDULLAH.pdf

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