Fabrication of Lateral Polysilicon Gap of Less than 50nm Using Conventional Lithography

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Fabrication of Lateral Polysilicon Gap of Less than 50nm Using Conventional Lithography

We report a thermal oxidation process for the fabrication of nanogaps of less than 50 nmin dimension.Nanogaps of this dimension are necessary to eliminate contributions from double-layer capacitance in the dielectric detection of protein or nucleic acid. The method combines conventional photolitho...

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Bibliographic Details
Main Authors:	Dhahi, Th. S., Hashim, U., Ali, M. E., Ahmed, N. M., Nazwa, T.
Format:	Article
Language:	English
Published:	Hindawi Publishing Corporation 2011
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/39098/ http://eprints.usm.my/39098/1/Fabrication_of_Lateral_Polysilicon_Gap_of_Less_than_50%E2%80%89nm_Using_Conventional_Lithography.pdf

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