Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering

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Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering

Indium nitride (InN) thin films were deposited onto Si (110) by reactive sputtering and pure In target at ambient temperature. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray...

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Bibliographic Details
Main Authors:	Amirhoseiny, M., Hassan, Z., Ng, S. S., Ahmad, M. A.
Format:	Article
Language:	English
Published:	Hindawi Publishing Corporation 2011
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/38434/ http://eprints.usm.my/38434/1/Characterizations_of_InN_Thin_Films_Grown_on_Si.pdf

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