Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering
Indium nitride (InN) thin films were deposited onto Si (110) by reactive sputtering and pure In target at ambient temperature. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray...
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| Language: | English |
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Hindawi Publishing Corporation
2011
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| Online Access: | http://eprints.usm.my/38434/ http://eprints.usm.my/38434/1/Characterizations_of_InN_Thin_Films_Grown_on_Si.pdf |
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| author | Amirhoseiny, M. Hassan, Z. Ng, S. S. Ahmad, M. A. |
| author_facet | Amirhoseiny, M. Hassan, Z. Ng, S. S. Ahmad, M. A. |
| author_sort | Amirhoseiny, M. |
| building | USM Institutional Repository |
| collection | Online Access |
| description | Indium nitride (InN) thin films were deposited onto Si (110) by reactive sputtering and pure In target at ambient temperature.
The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning
electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy, and X-ray diffraction techniques. The optical
properties of InN layers were examined by micro-Raman and Fourier transform infrared (FTIR) reflectance spectroscopy at room
temperature. Structural analysis specified nanocrystalline structure with crystal size of 15.87 nm, 16.65 nm, and 41.64nm for InN
films grown at N2/Ar ratio of 100/0, 75/25, and 50/50, respectively. The Raman spectra indicates well defined peaks at 578, 583,
and 583 cm−1, which correspond to the A1(LO) phonon of the hexagonal InN films grown at gas ratios of 100 : 0, 75 : 25 and 50 : 50
N2 : Ar, respectively. Results of FTIR spectroscopy show the clearly visible TO [E1(TO)] phonon mode of the InN at 479 cm−1 just
for film that were deposited at 50 : 50 N2 : Ar. The X-ray diffraction results indicate that the layers consist of InN nanocrystals. The
highest intensity of InN (101) peak and the best nanocrystalline InN films can be seen under the deposition condition with N2/Ar
gas mixture of 50 : 50. |
| first_indexed | 2025-11-15T17:31:49Z |
| format | Article |
| id | usm-38434 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T17:31:49Z |
| publishDate | 2011 |
| publisher | Hindawi Publishing Corporation |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-384342018-01-19T00:26:26Z http://eprints.usm.my/38434/ Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering Amirhoseiny, M. Hassan, Z. Ng, S. S. Ahmad, M. A. QC1-999 Physics Indium nitride (InN) thin films were deposited onto Si (110) by reactive sputtering and pure In target at ambient temperature. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy, and X-ray diffraction techniques. The optical properties of InN layers were examined by micro-Raman and Fourier transform infrared (FTIR) reflectance spectroscopy at room temperature. Structural analysis specified nanocrystalline structure with crystal size of 15.87 nm, 16.65 nm, and 41.64nm for InN films grown at N2/Ar ratio of 100/0, 75/25, and 50/50, respectively. The Raman spectra indicates well defined peaks at 578, 583, and 583 cm−1, which correspond to the A1(LO) phonon of the hexagonal InN films grown at gas ratios of 100 : 0, 75 : 25 and 50 : 50 N2 : Ar, respectively. Results of FTIR spectroscopy show the clearly visible TO [E1(TO)] phonon mode of the InN at 479 cm−1 just for film that were deposited at 50 : 50 N2 : Ar. The X-ray diffraction results indicate that the layers consist of InN nanocrystals. The highest intensity of InN (101) peak and the best nanocrystalline InN films can be seen under the deposition condition with N2/Ar gas mixture of 50 : 50. Hindawi Publishing Corporation 2011 Article PeerReviewed application/pdf en http://eprints.usm.my/38434/1/Characterizations_of_InN_Thin_Films_Grown_on_Si.pdf Amirhoseiny, M. and Hassan, Z. and Ng, S. S. and Ahmad, M. A. (2011) Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering. Journal of Nanomaterials, 2011 (579427). pp. 1-7. ISSN 1687-4110 https://doi.org/10.1155/2011/579427 |
| spellingShingle | QC1-999 Physics Amirhoseiny, M. Hassan, Z. Ng, S. S. Ahmad, M. A. Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering |
| title | Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering |
| title_full | Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering |
| title_fullStr | Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering |
| title_full_unstemmed | Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering |
| title_short | Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering |
| title_sort | characterizations of inn thin films grown on si (110) substrate by reactive sputtering |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/38434/ http://eprints.usm.my/38434/ http://eprints.usm.my/38434/1/Characterizations_of_InN_Thin_Films_Grown_on_Si.pdf |