Preparation and characterization of Nanostructured Porous Ternary and Quaternary Ill-Nitrides Alloys.
Nanostructured porous binary, ternary and quaternary Ill-nitrides (lnGaN and lnAIGaN) have been successfully fabricated using low cost ultraviolet (UV)-assisted photo-electrochemical (PEC) etching routes. Direct current (DC) has been employed to provide additional driving force to accelerate the PEC...
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| Format: | Monograph |
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Universiti Sains Malaysia
2016
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| Online Access: | http://eprints.usm.my/37142/ |
| _version_ | 1848878108997844992 |
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| author | Hassan, Zainuriah |
| author_facet | Hassan, Zainuriah |
| author_sort | Hassan, Zainuriah |
| building | USM Institutional Repository |
| collection | Online Access |
| description | Nanostructured porous binary, ternary and quaternary Ill-nitrides (lnGaN and lnAIGaN) have been successfully fabricated using low cost ultraviolet (UV)-assisted photo-electrochemical (PEC) etching routes. Direct current (DC) has been employed to provide additional driving force to accelerate the PEC etching process, in which an improvement in optical characteristics of the semiconductors with regards to photoluminescence intensity and a stress relaxation in optical phonon modes has been attained through the formation of nanostructures/pores on the semiconductor surface. |
| first_indexed | 2025-11-15T17:26:06Z |
| format | Monograph |
| id | usm-37142 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-15T17:26:06Z |
| publishDate | 2016 |
| publisher | Universiti Sains Malaysia |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-371422017-10-17T01:35:57Z http://eprints.usm.my/37142/ Preparation and characterization of Nanostructured Porous Ternary and Quaternary Ill-Nitrides Alloys. Hassan, Zainuriah QC1 Physics (General) TP1-1185 Chemical technology Nanostructured porous binary, ternary and quaternary Ill-nitrides (lnGaN and lnAIGaN) have been successfully fabricated using low cost ultraviolet (UV)-assisted photo-electrochemical (PEC) etching routes. Direct current (DC) has been employed to provide additional driving force to accelerate the PEC etching process, in which an improvement in optical characteristics of the semiconductors with regards to photoluminescence intensity and a stress relaxation in optical phonon modes has been attained through the formation of nanostructures/pores on the semiconductor surface. Universiti Sains Malaysia 2016 Monograph NonPeerReviewed Hassan, Zainuriah (2016) Preparation and characterization of Nanostructured Porous Ternary and Quaternary Ill-Nitrides Alloys. Technical Report. Universiti Sains Malaysia. |
| spellingShingle | QC1 Physics (General) TP1-1185 Chemical technology Hassan, Zainuriah Preparation and characterization of Nanostructured Porous Ternary and Quaternary Ill-Nitrides Alloys. |
| title | Preparation and characterization of Nanostructured Porous Ternary and Quaternary Ill-Nitrides Alloys.
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| title_full | Preparation and characterization of Nanostructured Porous Ternary and Quaternary Ill-Nitrides Alloys.
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| title_fullStr | Preparation and characterization of Nanostructured Porous Ternary and Quaternary Ill-Nitrides Alloys.
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| title_full_unstemmed | Preparation and characterization of Nanostructured Porous Ternary and Quaternary Ill-Nitrides Alloys.
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| title_short | Preparation and characterization of Nanostructured Porous Ternary and Quaternary Ill-Nitrides Alloys.
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| title_sort | preparation and characterization of nanostructured porous ternary and quaternary ill-nitrides alloys. |
| topic | QC1 Physics (General) TP1-1185 Chemical technology |
| url | http://eprints.usm.my/37142/ |