High Sensitivity pH Sensor Based on Porous Silicon
(PSi) Extended Gate Field-Effect Transistor

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High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor

In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 �m. The results of testing PSi for hydrogen ion sensing in different pH bu...

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Bibliographic Details
Main Authors:	Al-Hardan, Naif H., Abdul Hamid, Muhammad Azmi, M. Ahmed, Naser, Jalar, Azman, Shamsudin, Roslinda, Kamil Othman, Norinsan, Lim, Kar Keng, Chiu, Weesiong, N. Al-Rawi, Hamzah
Format:	Article
Language:	English
Published:	MDPI 2016
Subjects:	QC1-999 Physics TK1-9971 Electrical engineering. Electronics. Nuclear engineering
Online Access:	http://eprints.usm.my/36977/ http://eprints.usm.my/36977/1/%28High_Sensitivity_pH_Sensor%29_sensors-16-00839.pdf

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