High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor
In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 �m. The results of testing PSi for hydrogen ion sensing in different pH bu...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI
2016
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| Online Access: | http://eprints.usm.my/36977/ http://eprints.usm.my/36977/1/%28High_Sensitivity_pH_Sensor%29_sensors-16-00839.pdf |
| _version_ | 1848878061848625152 |
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| author | Al-Hardan, Naif H. Abdul Hamid, Muhammad Azmi M. Ahmed, Naser Jalar, Azman Shamsudin, Roslinda Kamil Othman, Norinsan Lim, Kar Keng Chiu, Weesiong N. Al-Rawi, Hamzah |
| author_facet | Al-Hardan, Naif H. Abdul Hamid, Muhammad Azmi M. Ahmed, Naser Jalar, Azman Shamsudin, Roslinda Kamil Othman, Norinsan Lim, Kar Keng Chiu, Weesiong N. Al-Rawi, Hamzah |
| author_sort | Al-Hardan, Naif H. |
| building | USM Institutional Repository |
| collection | Online Access |
| description | In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect
transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm
with a depth of approximately 42 �m. The results of testing PSi for hydrogen ion sensing in different
pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a
super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis
values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop,
respectively. The result of this study reveals a promising application of PSi in the field for detecting
hydrogen ions in different solutions. |
| first_indexed | 2025-11-15T17:25:21Z |
| format | Article |
| id | usm-36977 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T17:25:21Z |
| publishDate | 2016 |
| publisher | MDPI |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-369772017-10-09T04:32:49Z http://eprints.usm.my/36977/ High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor Al-Hardan, Naif H. Abdul Hamid, Muhammad Azmi M. Ahmed, Naser Jalar, Azman Shamsudin, Roslinda Kamil Othman, Norinsan Lim, Kar Keng Chiu, Weesiong N. Al-Rawi, Hamzah QC1-999 Physics TK1-9971 Electrical engineering. Electronics. Nuclear engineering In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 �m. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions. MDPI 2016 Article PeerReviewed application/pdf en http://eprints.usm.my/36977/1/%28High_Sensitivity_pH_Sensor%29_sensors-16-00839.pdf Al-Hardan, Naif H. and Abdul Hamid, Muhammad Azmi and M. Ahmed, Naser and Jalar, Azman and Shamsudin, Roslinda and Kamil Othman, Norinsan and Lim, Kar Keng and Chiu, Weesiong and N. Al-Rawi, Hamzah (2016) High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor. Sensors, 16 (6). pp. 1-12. ISSN 1424-8220 http://www.mdpi.com/1424-8220/16/6/839 |
| spellingShingle | QC1-999 Physics TK1-9971 Electrical engineering. Electronics. Nuclear engineering Al-Hardan, Naif H. Abdul Hamid, Muhammad Azmi M. Ahmed, Naser Jalar, Azman Shamsudin, Roslinda Kamil Othman, Norinsan Lim, Kar Keng Chiu, Weesiong N. Al-Rawi, Hamzah High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor |
| title | High Sensitivity pH Sensor Based on Porous Silicon
(PSi) Extended Gate Field-Effect Transistor |
| title_full | High Sensitivity pH Sensor Based on Porous Silicon
(PSi) Extended Gate Field-Effect Transistor |
| title_fullStr | High Sensitivity pH Sensor Based on Porous Silicon
(PSi) Extended Gate Field-Effect Transistor |
| title_full_unstemmed | High Sensitivity pH Sensor Based on Porous Silicon
(PSi) Extended Gate Field-Effect Transistor |
| title_short | High Sensitivity pH Sensor Based on Porous Silicon
(PSi) Extended Gate Field-Effect Transistor |
| title_sort | high sensitivity ph sensor based on porous silicon
(psi) extended gate field-effect transistor |
| topic | QC1-999 Physics TK1-9971 Electrical engineering. Electronics. Nuclear engineering |
| url | http://eprints.usm.my/36977/ http://eprints.usm.my/36977/ http://eprints.usm.my/36977/1/%28High_Sensitivity_pH_Sensor%29_sensors-16-00839.pdf |