High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor
In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 �m. The results of testing PSi for hydrogen ion sensing in different pH bu...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI
2016
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| Subjects: | |
| Online Access: | http://eprints.usm.my/36977/ http://eprints.usm.my/36977/1/%28High_Sensitivity_pH_Sensor%29_sensors-16-00839.pdf |
| Summary: | In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect
transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm
with a depth of approximately 42 �m. The results of testing PSi for hydrogen ion sensing in different
pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a
super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis
values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop,
respectively. The result of this study reveals a promising application of PSi in the field for detecting
hydrogen ions in different solutions. |
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