High Sensitivity of Porous Si-Doped GaN MSM Photodetector using Thermally Untreated Platinum Contact

QR Code

High Sensitivity of Porous Si-Doped GaN MSM Photodetector using Thermally Untreated Platinum Contact

this work. we report the formation of porous Si-doped GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical (ACPEC) etching conditions. The ACPEC formed porous GaN with excellent structural and surface morphology. Field emission scanning electron micr...

Full description

Bibliographic Details
Main Authors:	Mahmood, Ainorkhilah, Hassan, Zainuriah, Ahmed, Naser M, Yusof, Yushamdan, Yam, Fong Kwong, Chuah, Lee Siang
Format:	Conference or Workshop Item
Language:	English
Published:	2015
Subjects:	QC Physics
Online Access:	http://eprints.usm.my/34098/ http://eprints.usm.my/34098/1/Section%20C%20149.pdf

Similar Items

Enhancing Performance of Porous Si-Doped GaN based MSM Photodetector Using AC Technique
by: Mahmood, Ainorkhilah, et al.
Published: (2017)

Enhancing Performance Of Porous Si-Doped GaN Based Msm Photodetector Using 50 Hz Acpec
by: Mahmood, Ainorkhilah, et al.
Published: (2019)

Improvement in Opto-Electrical Properties of GaN MSM Photodetector by Contact Work-Function Selection
by: Ariff, F. A., et al.
Published: (2016)

Potential of polycrystalline GaN deposited by electron beam evaporator for metal-semiconductor-metal {MSM) photodetector device
by: Ariff, A., et al.
Published: (2017)

A Comprehensive Analysis of Plasmonics-Based GaAs MSM-Photodetector for High Bandwidth-Product Responsivity
by: Das, Narottam, et al.
Published: (2013)

Metal-semiconductor-metal (MSM) photodetectors with plasmonic nanogratings
by: Das, Narottam, et al.
Published: (2011)

Analysis of plasmonics-based MSM photodetector with optimized parameters
by: Masouleh, Farzaneh, et al.
Published: (2013)

High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN
by: Liu, Lei, et al.
Published: (2017)

Responsivity dependent anodization current density of nanoporous silicon based MSM photodetector
by: Al-Jumaili, Batool Eneaze Bandar, et al.
Published: (2016)

Effects Of Thermal Annealing Of Pt Schottky Contacts On n-GaN.
by: C, W Chin, et al.
Published: (2007)

A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
by: Hussein, Asaad Shakir
Published: (2011)

Innovative Developments in GaN-based Technology
by: Hassan, Zainuriah
Published: (2016)

Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
by: Kamarulzaman, Azharul Ariff
Published: (2017)

Impact of duty cycle and nano-grating height on the light absorption of plasmonics-based MSM photodetectors
by: Masouleh, F., et al.
Published: (2012)

PA-MBE GaN-Based Optoelectronics on Silicon Substrates
by: Chuah , Lee Siang
Published: (2009)

The Study Of Gan Materials For Device Applications
by: Yam, Fong Kwong
Published: (2007)

TEM studies of multilayer ohmic contacts to n-type AlGaN/GaN
by: Fay, Mike W., et al.
Published: (2003)

EBIC study of Au / n-type GaN Schottky contacts
by: Moldovan, Grigore, et al.
Published: (2003)

UV Photodetector based on Mg-doped GaN Thin Films Prepared by Sol-gel Spin Coating
by: Amin, Nurfahana Mohd, et al.
Published: (2017)

The Growth Of GaN-Based Low Dimensional Structures By CVD Using Platinum And Palladium Catalysts
by: Lay Kim, Tan
Published: (2019)

A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
by: Y, C.Lee, et al.
Published: (2000)

Enhancement Of Efficiency Of GaN-On-GaN Led By Wet Etching Roughening On N-Face GaN Substrate
by: Alias, Ezzah A., et al.
Published: (2020)

Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN
by: Moldovan, Grigore, et al.
Published: (2004)

On The Investigations Of Chip-On-Board Ultra-Violet Sensor By Screen Printing Of Gan Powder
by: Khi, Poay Beh, et al.
Published: (2019)

Enhancement Of Efficiency Of GaN-on-GaN LED By Wet Etching Roughening On N-Face Gan Substrate
by: Alias, Ezzah A., et al.
Published: (2020)

The Study Of Gan Materials For Device Applications [QD181.N1 Y19 2007 f rb].
by: Yam, Fong Kwong
Published: (2007)

Optimization of AlN/GaN strained-layer superlattice for GaN epitaxy on Si(111) substrate / Yusnizam Yusuf
by: Yusnizam, Yusuf
Published: (2017)

Microstructural characterisation of TiAlTiAu and TiAlPdAu ohmic contacts to AlGaN/GaN
by: Fay, Mike W., et al.
Published: (2001)

Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.
by: Zainal, Norzaini
Published: (2016)

Surface Morphology And Formation Of Nanostructured Porous GaN By UV-Assisted Electrochemical Etching.
by: L, S Chuah, et al.
Published: (2009)

Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai
by: Sivanathan , Pariasamy @ Chelladurai
Published: (2018)

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes
by: Qian, H., et al.
Published: (2016)

Static and dynamic TSEPs of SiC and GaN transistors
by: Zhu, Siwei, et al.
Published: (2018)

Light absorption and reflection in nanostructured GaAs metal-semiconductor-metal photodetectors
by: Das, Narottam, et al.
Published: (2014)

High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors
by: Karar, A., et al.
Published: (2011)

Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
by: Kamarulzaman, Azharul Ariff
Published: (2017)

Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content
by: Fay, Mike W., et al.
Published: (2008)

Properties of Strain in GaN Layer Grown on Si (100) Substrate and Its Porous Structure
by: Waheeda, S. N., et al.
Published: (2015)

Fabrication of MSM UV photodetector based on ZnO films synthesized by RF magnetron sputtering / Halim Ahmad, Mat Johar Abdullah and Ajis Lepit
by: Ahmad, Halim, et al.
Published: (2017)

The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures
by: Yusof, Ahmad Sauffi, et al.
Published: (2020)