Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells.
GaN and Ga-rich InGaN have been considered as the most important and indispensable materials used for the fabrication of efficient thin film solar cells which are active in entire visible and part of the near UV spectral regions. Initially, Al doped Ga203 thin film was synthesized using staking me...
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| Format: | Monograph |
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Universiti Sains Malaysia
2013
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| Online Access: | http://eprints.usm.my/32555/ |
| _version_ | 1848876842584375296 |
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| author | Devarajan, Mutharasu |
| author_facet | Devarajan, Mutharasu |
| author_sort | Devarajan, Mutharasu |
| building | USM Institutional Repository |
| collection | Online Access |
| description | GaN and Ga-rich InGaN have been considered as the most important and indispensable materials used for the
fabrication of efficient thin film solar cells which are active in entire visible and part of the near UV spectral
regions. Initially, Al doped Ga203 thin film was synthesized using staking method and doping occurs at
>400°C. Non-stoichiometry Al doped Ga203 thin film was observed by post annealing. |
| first_indexed | 2025-11-15T17:05:58Z |
| format | Monograph |
| id | usm-32555 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-15T17:05:58Z |
| publishDate | 2013 |
| publisher | Universiti Sains Malaysia |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-325552017-09-06T06:49:36Z http://eprints.usm.my/32555/ Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells. Devarajan, Mutharasu QC1-999 Physics GaN and Ga-rich InGaN have been considered as the most important and indispensable materials used for the fabrication of efficient thin film solar cells which are active in entire visible and part of the near UV spectral regions. Initially, Al doped Ga203 thin film was synthesized using staking method and doping occurs at >400°C. Non-stoichiometry Al doped Ga203 thin film was observed by post annealing. Universiti Sains Malaysia 2013 Monograph NonPeerReviewed Devarajan, Mutharasu (2013) Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells. Project Report. Universiti Sains Malaysia. (Submitted) |
| spellingShingle | QC1-999 Physics Devarajan, Mutharasu Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells. |
| title | Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells. |
| title_full | Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells. |
| title_fullStr | Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells. |
| title_full_unstemmed | Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells. |
| title_short | Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells. |
| title_sort | studies on transition metal impregnated mx(lnga)1_xn modulated structures for wide band gap multi-junction solar cells. |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/32555/ |