Design And Optimization Of Multi-Quantum Wells For GaAs Based Vertical Cavity Surface Emitting Lasers
Simulasi peranti bagi ciri-ciri elektrik dan optik laser pancaran permukaan rongga tegak (VCSEL) berasaskan GaAs telah diselidiki. Dalam laser sedemikian, kebocoran arus dan pemisahan lateral arus adalah beberapa masalah utama dalam rekabentuk VCSEL. Jadi dalam kajian ini, rekabentuk struktur VCS...
| Main Author: | Jasim, Farah Z. |
|---|---|
| Format: | Thesis |
| Language: | English |
| Published: |
2011
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/32380/ http://eprints.usm.my/32380/1/FARAH_Z._JASIM_24%28NN%29.pdf |
Similar Items
Design And Optimization Of Multi-Quantum Wells For
Gaas Based Vertical Cavity Surface Emitting Lasers
by: Jasim, Farah Z.
Published: (2010)
by: Jasim, Farah Z.
Published: (2010)
On the characterization of a new type of oxide-confined 850nm GaAs-based vertical-cavity surface-emitting laser
by: MITANI, S, et al.
Published: (2008)
by: MITANI, S, et al.
Published: (2008)
Design and analysis of a GaAs-based 850-nm vertical-cavity surface-emitting laser with different doping in the reflection regions
by: Mitani, S. M., et al.
Published: (2007)
by: Mitani, S. M., et al.
Published: (2007)
Comparison of mesa and device diameter variation in double wafer-fused multi quantum-well, long-wavelength, vertical cavity surface emitting lasers
by: Menon .P.S,, et al.
Published: (2011)
by: Menon .P.S,, et al.
Published: (2011)
Analysis Of Long-Wavelength Vertical-Cavity Surface-Emitting Lasers
by: Yap, David Fook Weng
Published: (2006)
by: Yap, David Fook Weng
Published: (2006)
Development of Infrared Transmitter Using Vertical Cavity Surface Emitting Laser
by: Ayatollahi, Fatima Lina
Published: (2004)
by: Ayatollahi, Fatima Lina
Published: (2004)
Temperature effects on power characteristics of vertical-cavity surface-emitting lasers
by: Hisham, Hisham K., et al.
Published: (2024)
by: Hisham, Hisham K., et al.
Published: (2024)
The electron-phonon interaction in GaAs/(AlGa)As quantum wells
by: Cross, Andrew John
Published: (2001)
by: Cross, Andrew John
Published: (2001)
Output power limitations and improvements in passively mode locked GaAs/AlGaAs quantum well lasers
by: Tandoi, G., et al.
Published: (2012)
by: Tandoi, G., et al.
Published: (2012)
Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates
by: Prando, G.A., et al.
Published: (2018)
by: Prando, G.A., et al.
Published: (2018)
Scaling effects on the dynamic characteristics of long-wavelength vertical-cavity surface-emitting lasers (VCSELs)
by: YAP, D, et al.
Published: (2008)
by: YAP, D, et al.
Published: (2008)
Fabrication And Simulation Of Vertical Cavity Surface-Emitting Laser Packaging For Face Recognition In Automotive Applications
by: Arshad, Khairul Mohd
Published: (2024)
by: Arshad, Khairul Mohd
Published: (2024)
Sub-picosecond 9.8W peak power passively mode locked quantum well GaAs/AlGaAs laser
by: Tandoi, G., et al.
Published: (2011)
by: Tandoi, G., et al.
Published: (2011)
Subpicosecond colliding pulse mode locking at 126 GHz in monolithic GaAs/AlGaAs quantum well lasers: Experiments and theory
by: Tandoi, G., et al.
Published: (2013)
by: Tandoi, G., et al.
Published: (2013)
Analysis of In–P based 1.55 µm electrically pumped vertical-external-cavity surface-emitting lasers
by: Yap, David F W, et al.
Published: (2007)
by: Yap, David F W, et al.
Published: (2007)
Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes
by: Filali, Walid, et al.
Published: (2017)
by: Filali, Walid, et al.
Published: (2017)
An analysis of the electron trajectory in the vicinity of GaAs quantum dot
by: Hanafi Ithnin,, et al.
Published: (2014)
by: Hanafi Ithnin,, et al.
Published: (2014)
Dynamics of a vertical cavity quantum cascade phonon laser structure
by: Maryam, W., et al.
Published: (2013)
by: Maryam, W., et al.
Published: (2013)
Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures
by: Ahmad Fauzi, D., et al.
Published: (2015)
by: Ahmad Fauzi, D., et al.
Published: (2015)
Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures
by: Sanchez, A. M., et al.
Published: (2009)
by: Sanchez, A. M., et al.
Published: (2009)
Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots
by: Wahab, Yussof, et al.
Published: (2006)
by: Wahab, Yussof, et al.
Published: (2006)
Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots
by: Wahab, Yussof, et al.
Published: (2006)
by: Wahab, Yussof, et al.
Published: (2006)
Beat structure in spectrally resolved four-wave mixing under crosslinear polarization in GaAs quantum wells
by: -, Suryadi, et al.
Published: (2000)
by: -, Suryadi, et al.
Published: (2000)
Growth parameters of InAs/GaAs quantum dots grown by MOVPE
by: Roslan, Sharizar, et al.
Published: (2006)
by: Roslan, Sharizar, et al.
Published: (2006)
Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings
by: Ahmad Kamarudin, Mazliana, et al.
Published: (2011)
by: Ahmad Kamarudin, Mazliana, et al.
Published: (2011)
Structural and Optical Properties of Diluted Magnetic Ga1−xMnxAs–AlAs Quantum Wells Grown on High-Index GaAs Planes
by: Gunes, Mustafa, et al.
Published: (2017)
by: Gunes, Mustafa, et al.
Published: (2017)
Clusters of GaAs prepared by quantum mechanical DFT and
the nanowire raman spectra
by: Ahmad Nazrul Rosli,, et al.
Published: (2013)
by: Ahmad Nazrul Rosli,, et al.
Published: (2013)
STRUCTURAL AND OPTICAL PROPERTIES OF GaAs1-xBix/AlyGa1-yAs QUANTUM WELL HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY
by: Almunyif, Amjad
Published: (2024)
by: Almunyif, Amjad
Published: (2024)
Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature
by: Bhunia, Amit, et al.
Published: (2018)
by: Bhunia, Amit, et al.
Published: (2018)
Initial stages of GaAs/Au eutectic alloy formation for the growth of GaAs nanowires
by: Rosnita, M, et al.
Published: (2012)
by: Rosnita, M, et al.
Published: (2012)
Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
by: Fernández-Delgado, Natalia, et al.
Published: (2017)
by: Fernández-Delgado, Natalia, et al.
Published: (2017)
Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings
by: Hodgson, Peter D., et al.
Published: (2013)
by: Hodgson, Peter D., et al.
Published: (2013)
Effects Of V/III Ratio Of InGaN Quantum
Well On The Properties Of Near Ultraviolet Light Emitting Diodes
by: Sahar, Mohd Ann Amirul Zulffiqal Md, et al.
Published: (2020)
by: Sahar, Mohd Ann Amirul Zulffiqal Md, et al.
Published: (2020)
Effects Of V/III Ratio Of InGaN Quantum Well On The Properties Of Near Ultraviolet Light Emitting Diodes
by: Sahar, Mohd Ann Amirul Zulffiqal Md, et al.
Published: (2020)
by: Sahar, Mohd Ann Amirul Zulffiqal Md, et al.
Published: (2020)
Distribution of ga vacancies in Zn diffused GaAs
by: Zahari Mohamed Darus,, et al.
Published: (1992)
by: Zahari Mohamed Darus,, et al.
Published: (1992)
Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices
by: Gordo, V. Orsi, et al.
Published: (2017)
by: Gordo, V. Orsi, et al.
Published: (2017)
Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/ GaAs quantum dots
by: Delgado, N. Fernandez, et al.
Published: (2016)
by: Delgado, N. Fernandez, et al.
Published: (2016)
Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition
by: Rais, Shamsul Amir Abdul, et al.
by: Rais, Shamsul Amir Abdul, et al.
Epitaxial Growth Of Gan On Gan Multi Quantum Well For The Deep Green Light Emitting Diode
by: Abdul Rais, Shamsul Amir
Published: (2022)
by: Abdul Rais, Shamsul Amir
Published: (2022)
Surface morphology studies of single and double layer In0.5Ga0.5As/GaAs quantum dots grown by stranski-krastanow growth modes
by: Aryanto, Didik, et al.
Published: (2009)
by: Aryanto, Didik, et al.
Published: (2009)
Similar Items
-
Design And Optimization Of Multi-Quantum Wells For
Gaas Based Vertical Cavity Surface Emitting Lasers
by: Jasim, Farah Z.
Published: (2010) -
On the characterization of a new type of oxide-confined 850nm GaAs-based vertical-cavity surface-emitting laser
by: MITANI, S, et al.
Published: (2008) -
Design and analysis of a GaAs-based 850-nm vertical-cavity surface-emitting laser with different doping in the reflection regions
by: Mitani, S. M., et al.
Published: (2007) -
Comparison of mesa and device diameter variation in double wafer-fused multi quantum-well, long-wavelength, vertical cavity surface emitting lasers
by: Menon .P.S,, et al.
Published: (2011) -
Analysis Of Long-Wavelength Vertical-Cavity Surface-Emitting Lasers
by: Yap, David Fook Weng
Published: (2006)