Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates

Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates

Secara umumnya tesis ini membentangkan kajian lapisan GaN yang ditumbuh di atas substrat Si (100). Pada bahagian pertama tesis ini, sifat-sifat lapisan GaN di atas substrat kubik Si telah dibincangkan. Penambahbaikan ke atas sifat-sifat lapisan GaN telah dikesan melalui kaedah penyepuhlindapan....

Full description

Bibliographic Details
Main Author: Mohmad Zaini, Siti Nurul Waheeda
Format: Thesis
Language:English
Published: 2015
Subjects:
QC1 Physics (General)
Online Access:http://eprints.usm.my/31387/
http://eprints.usm.my/31387/1/FABRICATION_AND_CHARACTERIZATION_OF_GaN_GROWN_ON_CUBIC_Si_%28100%29_AND_GaAs_%28001%29_SUBSTRATES.pdf
_version_ 1848876557417840640
author Mohmad Zaini, Siti Nurul Waheeda
author_facet Mohmad Zaini, Siti Nurul Waheeda
author_sort Mohmad Zaini, Siti Nurul Waheeda
building USM Institutional Repository
collection Online Access
description Secara umumnya tesis ini membentangkan kajian lapisan GaN yang ditumbuh di atas substrat Si (100). Pada bahagian pertama tesis ini, sifat-sifat lapisan GaN di atas substrat kubik Si telah dibincangkan. Penambahbaikan ke atas sifat-sifat lapisan GaN telah dikesan melalui kaedah penyepuhlindapan. In general, this thesis presents the study of GaN layer grown on different cubic substrates. In the first part of this work, the properties of GaN film grown on (100)- oriented cubic Si substrate was investigated. Improvement in the properties of the GaN layer are observed by means of thermal annealing treatment.
first_indexed 2025-11-15T17:01:26Z
format Thesis
id usm-31387
institution Universiti Sains Malaysia
institution_category Local University
language English
last_indexed 2025-11-15T17:01:26Z
publishDate 2015
recordtype eprints
repository_type Digital Repository
spelling usm-313872019-04-12T05:25:40Z http://eprints.usm.my/31387/ Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates Mohmad Zaini, Siti Nurul Waheeda QC1 Physics (General) Secara umumnya tesis ini membentangkan kajian lapisan GaN yang ditumbuh di atas substrat Si (100). Pada bahagian pertama tesis ini, sifat-sifat lapisan GaN di atas substrat kubik Si telah dibincangkan. Penambahbaikan ke atas sifat-sifat lapisan GaN telah dikesan melalui kaedah penyepuhlindapan. In general, this thesis presents the study of GaN layer grown on different cubic substrates. In the first part of this work, the properties of GaN film grown on (100)- oriented cubic Si substrate was investigated. Improvement in the properties of the GaN layer are observed by means of thermal annealing treatment. 2015-09 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/31387/1/FABRICATION_AND_CHARACTERIZATION_OF_GaN_GROWN_ON_CUBIC_Si_%28100%29_AND_GaAs_%28001%29_SUBSTRATES.pdf Mohmad Zaini, Siti Nurul Waheeda (2015) Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates. Masters thesis, Universiti Sains Malaysia.
spellingShingle QC1 Physics (General)
Mohmad Zaini, Siti Nurul Waheeda
Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
title Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
title_full Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
title_fullStr Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
title_full_unstemmed Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
title_short Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
title_sort fabrication and characterization of gan grown on cubic si (100) and gaas (001) substrates
topic QC1 Physics (General)
url http://eprints.usm.my/31387/
http://eprints.usm.my/31387/1/FABRICATION_AND_CHARACTERIZATION_OF_GaN_GROWN_ON_CUBIC_Si_%28100%29_AND_GaAs_%28001%29_SUBSTRATES.pdf

Similar Items