Inductively Coupled Plasma Etching On Gan

Dalam projek ini, penyelidikan difokuskan kepada kajian tentang pengaruh pelbagai campuran plasma (H2 dan Ar) kepada Ch sebagai gas asas pada GaN menggunakan punaran kering khususnya punaran plasma yang digandingkan secara teraruh (ICP) untuk mendapatkan anisotropik yang tinggi In this project...

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Main Author: Rosli, Siti Azlina
Format: Thesis
Language:English
Published: 2010
Subjects:
Online Access:http://eprints.usm.my/29516/
http://eprints.usm.my/29516/1/Inductively_coupled_plasma_etching_on_GaN.pdf
_version_ 1848876122497875968
author Rosli, Siti Azlina
author_facet Rosli, Siti Azlina
author_sort Rosli, Siti Azlina
building USM Institutional Repository
collection Online Access
description Dalam projek ini, penyelidikan difokuskan kepada kajian tentang pengaruh pelbagai campuran plasma (H2 dan Ar) kepada Ch sebagai gas asas pada GaN menggunakan punaran kering khususnya punaran plasma yang digandingkan secara teraruh (ICP) untuk mendapatkan anisotropik yang tinggi In this project, the research mainly focused on the investigation of the influence of the various plasma mixtures (H2 and Ar) in Ch-based on GaN using dry etching majoring in Inductively Coupled Plasma etching to obtain highly anisotropic
first_indexed 2025-11-15T16:54:32Z
format Thesis
id usm-29516
institution Universiti Sains Malaysia
institution_category Local University
language English
last_indexed 2025-11-15T16:54:32Z
publishDate 2010
recordtype eprints
repository_type Digital Repository
spelling usm-295162017-03-22T02:23:46Z http://eprints.usm.my/29516/ Inductively Coupled Plasma Etching On Gan Rosli, Siti Azlina QC1 Physics (General) Dalam projek ini, penyelidikan difokuskan kepada kajian tentang pengaruh pelbagai campuran plasma (H2 dan Ar) kepada Ch sebagai gas asas pada GaN menggunakan punaran kering khususnya punaran plasma yang digandingkan secara teraruh (ICP) untuk mendapatkan anisotropik yang tinggi In this project, the research mainly focused on the investigation of the influence of the various plasma mixtures (H2 and Ar) in Ch-based on GaN using dry etching majoring in Inductively Coupled Plasma etching to obtain highly anisotropic 2010-01 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/29516/1/Inductively_coupled_plasma_etching_on_GaN.pdf Rosli, Siti Azlina (2010) Inductively Coupled Plasma Etching On Gan. Masters thesis, USM.
spellingShingle QC1 Physics (General)
Rosli, Siti Azlina
Inductively Coupled Plasma Etching On Gan
title Inductively Coupled Plasma Etching On Gan
title_full Inductively Coupled Plasma Etching On Gan
title_fullStr Inductively Coupled Plasma Etching On Gan
title_full_unstemmed Inductively Coupled Plasma Etching On Gan
title_short Inductively Coupled Plasma Etching On Gan
title_sort inductively coupled plasma etching on gan
topic QC1 Physics (General)
url http://eprints.usm.my/29516/
http://eprints.usm.my/29516/1/Inductively_coupled_plasma_etching_on_GaN.pdf