Development Of N-Type Spin-On Dopant For Silicon Devices

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Development Of N-Type Spin-On Dopant For Silicon Devices

In this research, works are focused on the preparation of n-type spin-on dopant (SOD) using sol-gel technology. The main aim of this research is to prepare n-type SOD with doping concentration in the range of 1016 to 1020 cm-3. Di dalam penyelidikan ini, kerja-kerja lebih difokuskan kepada penyediaa...

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Bibliographic Details
Main Author:	Ahmad Kamil, Suraya
Format:	Thesis
Language:	English
Published:	2009
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/29136/ http://eprints.usm.my/29136/1/Development_of_N-type_spin-on_dopant_for_silicon_devices.pdf

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