Development Of N-Type Spin-On Dopant For Silicon Devices
In this research, works are focused on the preparation of n-type spin-on dopant (SOD) using sol-gel technology. The main aim of this research is to prepare n-type SOD with doping concentration in the range of 1016 to 1020 cm-3. Di dalam penyelidikan ini, kerja-kerja lebih difokuskan kepada penyediaa...
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| Format: | Thesis |
| Language: | English |
| Published: |
2009
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| Online Access: | http://eprints.usm.my/29136/ http://eprints.usm.my/29136/1/Development_of_N-type_spin-on_dopant_for_silicon_devices.pdf |
| _version_ | 1848876034357723136 |
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| author | Ahmad Kamil, Suraya |
| author_facet | Ahmad Kamil, Suraya |
| author_sort | Ahmad Kamil, Suraya |
| building | USM Institutional Repository |
| collection | Online Access |
| description | In this research, works are focused on the preparation of n-type spin-on dopant (SOD) using sol-gel technology. The main aim of this research is to prepare n-type SOD with doping concentration in the range of 1016 to 1020 cm-3. Di dalam penyelidikan ini, kerja-kerja lebih difokuskan kepada penyediaan pendopan putaran jenis n (SOD) menggunakan teknologi sol-gel. Tujuan utama penyelidikan ini adalah untuk menyediakan SOD dengan kepekatan pendopan di antara 1016 kepada 1020 sm-3. |
| first_indexed | 2025-11-15T16:53:08Z |
| format | Thesis |
| id | usm-29136 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T16:53:08Z |
| publishDate | 2009 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-291362017-03-22T02:23:46Z http://eprints.usm.my/29136/ Development Of N-Type Spin-On Dopant For Silicon Devices Ahmad Kamil, Suraya QC1-999 Physics In this research, works are focused on the preparation of n-type spin-on dopant (SOD) using sol-gel technology. The main aim of this research is to prepare n-type SOD with doping concentration in the range of 1016 to 1020 cm-3. Di dalam penyelidikan ini, kerja-kerja lebih difokuskan kepada penyediaan pendopan putaran jenis n (SOD) menggunakan teknologi sol-gel. Tujuan utama penyelidikan ini adalah untuk menyediakan SOD dengan kepekatan pendopan di antara 1016 kepada 1020 sm-3. 2009 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/29136/1/Development_of_N-type_spin-on_dopant_for_silicon_devices.pdf Ahmad Kamil, Suraya (2009) Development Of N-Type Spin-On Dopant For Silicon Devices. Masters thesis, Universiti Sains Malaysia. |
| spellingShingle | QC1-999 Physics Ahmad Kamil, Suraya Development Of N-Type Spin-On Dopant For Silicon Devices |
| title | Development Of N-Type Spin-On Dopant For Silicon Devices |
| title_full | Development Of N-Type Spin-On Dopant For Silicon Devices |
| title_fullStr | Development Of N-Type Spin-On Dopant For Silicon Devices |
| title_full_unstemmed | Development Of N-Type Spin-On Dopant For Silicon Devices |
| title_short | Development Of N-Type Spin-On Dopant For Silicon Devices |
| title_sort | development of n-type spin-on dopant for silicon devices |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/29136/ http://eprints.usm.my/29136/1/Development_of_N-type_spin-on_dopant_for_silicon_devices.pdf |