Silicon n-Channel Metal Oxide
Semiconductor Field Effect Transistor
Fabrication And Its Effect On Output
Characteristics

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Silicon n-Channel Metal Oxide Semiconductor Field Effect Transistor Fabrication And Its Effect On Output Characteristics

n-channel metal oxide semiconductor field effect transistor (n-MOSFET) fabrication requires specialized and expensive technologies such as ion implantation, chemical vapor deposition (CVD) and hazardous gases such as silane (SiH4), HCl and hydrogen. Low cost emulsion photomask with 35 μm channel...

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Bibliographic Details
Main Author:	Mohd Rashid, Mohd Marzaini
Format:	Thesis
Language:	English
Published:	2012
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/29062/ http://eprints.usm.my/29062/1/SILICON_n-CHANNEL_METAL_OXIDE_SEMI_CONDUCTOR_FIELD_EFFECT_TRANSISTOR_FABRICATION__AND_ITS_EFFECT_ON_OUTPUT_CHARACTERISTICS.pdf

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