Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour
The need to thermally grow a thick SiO2 film (>50 nm) with high breakdown voltage (> 5 MV/cm at 1 uA/cm2) is crucial for high power devices (> 600 V) applications. Keperluan menghasilkan filem tebal SiO2(> 50 nm) dengan keupayaan pecahan voltan yang lebih tinggi (> 5 MV/cm pada 1 uA/...
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| Format: | Thesis |
| Language: | English |
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2014
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| Online Access: | http://eprints.usm.my/29000/ http://eprints.usm.my/29000/1/DEVELOPMENT_OF_SiO2_ON_4H-SiC_BY_DIRECT_THERMAL_OXIDATION_AND_POST_OXIDATION_ANNEALING_IN_HNO3_%26_H2O_VAPOUR.pdf |
| _version_ | 1848875997246521344 |
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| author | Banu , Poobalan |
| author_facet | Banu , Poobalan |
| author_sort | Banu , Poobalan |
| building | USM Institutional Repository |
| collection | Online Access |
| description | The need to thermally grow a thick SiO2 film (>50 nm) with high breakdown voltage (> 5 MV/cm at 1 uA/cm2) is crucial for high power devices (> 600 V) applications.
Keperluan menghasilkan filem tebal SiO2(> 50 nm) dengan keupayaan pecahan voltan yang lebih tinggi (> 5 MV/cm pada 1 uA/cm2) melalui kaedah pengoksidaan terma adalah sangat penting bagi aplikasi peranti kuasa tinggi (> 600 V). |
| first_indexed | 2025-11-15T16:52:32Z |
| format | Thesis |
| id | usm-29000 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T16:52:32Z |
| publishDate | 2014 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-290002019-04-12T05:26:03Z http://eprints.usm.my/29000/ Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour Banu , Poobalan TN1-997 Mining engineering. Metallurgy The need to thermally grow a thick SiO2 film (>50 nm) with high breakdown voltage (> 5 MV/cm at 1 uA/cm2) is crucial for high power devices (> 600 V) applications. Keperluan menghasilkan filem tebal SiO2(> 50 nm) dengan keupayaan pecahan voltan yang lebih tinggi (> 5 MV/cm pada 1 uA/cm2) melalui kaedah pengoksidaan terma adalah sangat penting bagi aplikasi peranti kuasa tinggi (> 600 V). 2014 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/29000/1/DEVELOPMENT_OF_SiO2_ON_4H-SiC_BY_DIRECT_THERMAL_OXIDATION_AND_POST_OXIDATION_ANNEALING_IN_HNO3_%26_H2O_VAPOUR.pdf Banu , Poobalan (2014) Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour. PhD thesis, Universiti Sains Malaysia. |
| spellingShingle | TN1-997 Mining engineering. Metallurgy Banu , Poobalan Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour |
| title | Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour |
| title_full | Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour |
| title_fullStr | Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour |
| title_full_unstemmed | Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour |
| title_short | Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour |
| title_sort | development of sio2 on 4h-sic by direct thermal oxidation and post oxidation annealing in hno3 & h2o vapour |
| topic | TN1-997 Mining engineering. Metallurgy |
| url | http://eprints.usm.my/29000/ http://eprints.usm.my/29000/1/DEVELOPMENT_OF_SiO2_ON_4H-SiC_BY_DIRECT_THERMAL_OXIDATION_AND_POST_OXIDATION_ANNEALING_IN_HNO3_%26_H2O_VAPOUR.pdf |