Al-Ta2O5-GaN
Semiconductor Device Structure

QR Code

Al-Ta2O5-GaN Semiconductor Device Structure

GaN-based semiconductor devices have been extensively investigated for used in high power and high temperature device applications in order to replace Si which is no longer capable to fulfill these ever-increasing demands. The characteristics of low leakage current, low oxide charge density, and...

Full description

Bibliographic Details
Main Author:	Yeoh, Lai Seng
Format:	Thesis
Language:	English
Published:	2014
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/28959/ http://eprints.usm.my/28959/1/Al-Ta2O5-GaN_SEMICONDUCTOR_DEVICE_SRTUCTURE.pdf

Similar Items

Enhancement Of Efficiency Of GaN-On-GaN Led By Wet Etching Roughening On N-Face GaN Substrate
by: Alias, Ezzah A., et al.
Published: (2020)

Potential of polycrystalline GaN deposited by electron beam evaporator for metal-semiconductor-metal {MSM) photodetector device
by: Ariff, A., et al.
Published: (2017)

Enhancement Of Efficiency Of GaN-on-GaN LED By Wet Etching Roughening On N-Face Gan Substrate
by: Alias, Ezzah A., et al.
Published: (2020)

Doping effect numerical comparison of band gap energy and active region range for GaN and GaAs based semiconductor
by: Faris Azim Ahmad Fajri, Faris Azim, et al.
Published: (2021)

Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.
by: Zainal, Norzaini
Published: (2016)

Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
by: Thahab, S M, et al.
Published: (2007)

Effect Of GaN Nucleation Layer Temperature On Structural And Morphological Properties Of Ud-GaN Template Grown On Pss
by: Ahmad, M. A., et al.
Published: (2019)

Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
by: L, S Chuah, et al.
Published: (2007)

Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
by: Kamarulzaman, Azharul Ariff
Published: (2017)

A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
by: Hussein, Asaad Shakir
Published: (2011)

Innovative Developments in GaN-based Technology
by: Hassan, Zainuriah
Published: (2016)

Efficiency Droop Of InGaN/GaN Led With Different Indium Composition
by: Samsudin, M. E. A., et al.
Published: (2019)

Simulation of High Performance Quantum Well GaN-based LED
by: Hassan, Z., et al.
Published: (2005)

Effects Of Thermal Annealing Of Pt Schottky Contacts On n-GaN.
by: C, W Chin, et al.
Published: (2007)

PA-MBE GaN-Based Optoelectronics on Silicon Substrates
by: Chuah , Lee Siang
Published: (2009)

Thin Film Undoped And P-Doped GaN As Sensor
by: Nashaain, N. M., et al.
Published: (2020)

Properties of p-GaN Layer on Different Nitride Surfaces
by: Fatihah, N., et al.
Published: (2015)

Thin Film Undoped And P-Doped GaN As Sensor
by: Nashaain, N.M., et al.
Published: (2020)

DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
by: Munir, Tariq
Published: (2011)

The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures
by: Yusof, Ahmad Sauffi, et al.
Published: (2020)

The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures
by: Yusof, Ahmad Sauffi, et al.
Published: (2020)

Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes
by: Asri, R. I. M, et al.
Published: (2020)

Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes
by: Asri, R. I. M., et al.
Published: (2020)

Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire
by: Song, T. L.
Published: (2005)

Properties of Strain in GaN Layer Grown on Si (100) Substrate and Its Porous Structure
by: Waheeda, S. N., et al.
Published: (2015)

Fabrication of Porous GaN using Bottom-Up Approached through Electron Beam Evaporator for High Efficient Devices
by: Samsudin, M. E. A., et al.
Published: (2015)

In GaN Double Heterostructure (DH) Laser Diode Performance And Optimization.
by: Thahab, S M, et al.
Published: (2007)

Growth of n-ZnOnanorods on p-GaN using an Aqueous Solution Method
by: Mohammad, Sabah M., et al.
Published: (2015)

Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN
by: Ibrahim, N., et al.
Published: (2019)

SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation
by: Li, Ke, et al.
Published: (2016)

Improved Optoelectronic Characteristics of Post-Annealed Ti/Al/ITO Transparent Conducting Electrodes Deposited on n-GaN
by: Ali, Ahmad Hadi, et al.
Published: (2015)

Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
by: Al-Heuseen, Khalled Mhammad Kallef
Published: (2011)

Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
by: Shamsuddin, Siti Nur Atikah
Published: (2019)

Effects Of Three-Step Magnesium Doping In p-GaN Layer On The Properties Of InGaN Based Light Emitting Diode
by: Hamzah, Nur Atiqah, et al.
Published: (2020)

Effects Of Three-Step Magnesium Doping In p-GaN Layer On The Properties Of InGaN Based Light Emitting Diode
by: Hamzah, Nur Atiqah, et al.
Published: (2020)

Fabrication of a High-Stability Blue-Light-Emitting Diode Based on n-ZnO Nanorods/p-GaN Structure Heterojunction Grown by Hydrothermal Method
by: Azzez, Shrook A., et al.
Published: (2016)

Surface Morphology And Formation Of Nanostructured Porous GaN By UV-Assisted Electrochemical Etching.
by: L, S Chuah, et al.
Published: (2009)

Effects of Withdrawal Speed on the Synthesis of GaN Thin Films by Dip Coating Method
by: Hamid, Maizatul Akmam Ab, et al.
Published: (2016)

High Sensitivity of Porous Si-Doped GaN MSM Photodetector using Thermally Untreated Platinum Contact
by: Mahmood, Ainorkhilah, et al.
Published: (2015)

The influence of temperature on the electrical conductivity of GaN piezoelectric semiconductors
by: Qiao, Y., et al.
Published: (2023)