Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography.

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Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography.

Anisotropic etching of silicon has been widely used in fabrication of MEMS devices for many years. In this work, TMAH and KOH with IPA are used to etch silicon nanowire transistor patterns.

Bibliographic Details
Main Authors:	Abdullah, A. Makarimi, Hutagalung, Sabar D., Lockman, Zainovia
Format:	Conference or Workshop Item
Language:	English
Published:	2010
Subjects:	TN1-997 Mining engineering. Metallurgy
Online Access:	http://eprints.usm.my/19500/ http://eprints.usm.my/19500/1/International_Conference_on_Nanotechnology.pdf

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