Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography.
Anisotropic etching of silicon has been widely used in fabrication of MEMS devices for many years. In this work, TMAH and KOH with IPA are used to etch silicon nanowire transistor patterns.
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2010
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| Subjects: | |
| Online Access: | http://eprints.usm.my/19500/ http://eprints.usm.my/19500/1/International_Conference_on_Nanotechnology.pdf |
| _version_ | 1848873423122464768 |
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| author | Abdullah, A. Makarimi Hutagalung, Sabar D. Lockman, Zainovia |
| author_facet | Abdullah, A. Makarimi Hutagalung, Sabar D. Lockman, Zainovia |
| author_sort | Abdullah, A. Makarimi |
| building | USM Institutional Repository |
| collection | Online Access |
| description | Anisotropic etching of silicon has been widely used in fabrication of MEMS devices for many years. In this work, TMAH and KOH with IPA are used to etch silicon nanowire transistor patterns.
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| first_indexed | 2025-11-15T16:11:37Z |
| format | Conference or Workshop Item |
| id | usm-19500 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T16:11:37Z |
| publishDate | 2010 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-195002017-05-15T08:10:45Z http://eprints.usm.my/19500/ Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography. Abdullah, A. Makarimi Hutagalung, Sabar D. Lockman, Zainovia TN1-997 Mining engineering. Metallurgy Anisotropic etching of silicon has been widely used in fabrication of MEMS devices for many years. In this work, TMAH and KOH with IPA are used to etch silicon nanowire transistor patterns. 2010-08 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/19500/1/International_Conference_on_Nanotechnology.pdf Abdullah, A. Makarimi and Hutagalung, Sabar D. and Lockman, Zainovia (2010) Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography. In: Proceedings of the International Conference on Nanotechnology: Fundamentals and Applications , 4-6 August 2010, Ottawa, Ontario, Canada. |
| spellingShingle | TN1-997 Mining engineering. Metallurgy Abdullah, A. Makarimi Hutagalung, Sabar D. Lockman, Zainovia Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography. |
| title | Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography. |
| title_full | Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography. |
| title_fullStr | Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography. |
| title_full_unstemmed | Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography. |
| title_short | Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography. |
| title_sort | etching effect on the formation of silicon nanowire transistor patterned by afm lithography. |
| topic | TN1-997 Mining engineering. Metallurgy |
| url | http://eprints.usm.my/19500/ http://eprints.usm.my/19500/1/International_Conference_on_Nanotechnology.pdf |