Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997].

Lapisan nipis ZrO2 untuk aplikasi get dielektrik telah dibentuk di atas substrat Si dan SiC dengan menggunakan kombinasi proses pemercitan logam dan pengoksidaan haba. ZrO2 thin films for gate dielectric application has been formed on Si and SiC substrates using a combination of metal sputtering...

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Main Author: Tedi, Kurniawan
Format: Thesis
Language:English
Published: 2009
Subjects:
Online Access:http://eprints.usm.my/15537/
http://eprints.usm.my/15537/1/FORMATION_OF_ZrO2_THIN_FILMS.pdf
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author Tedi, Kurniawan
author_facet Tedi, Kurniawan
author_sort Tedi, Kurniawan
building USM Institutional Repository
collection Online Access
description Lapisan nipis ZrO2 untuk aplikasi get dielektrik telah dibentuk di atas substrat Si dan SiC dengan menggunakan kombinasi proses pemercitan logam dan pengoksidaan haba. ZrO2 thin films for gate dielectric application has been formed on Si and SiC substrates using a combination of metal sputtering and thermal oxidation process.
first_indexed 2025-11-15T15:53:38Z
format Thesis
id usm-15537
institution Universiti Sains Malaysia
institution_category Local University
language English
last_indexed 2025-11-15T15:53:38Z
publishDate 2009
recordtype eprints
repository_type Digital Repository
spelling usm-155372017-05-15T08:05:02Z http://eprints.usm.my/15537/ Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997]. Tedi, Kurniawan TN1-997 Mining engineering. Metallurgy Lapisan nipis ZrO2 untuk aplikasi get dielektrik telah dibentuk di atas substrat Si dan SiC dengan menggunakan kombinasi proses pemercitan logam dan pengoksidaan haba. ZrO2 thin films for gate dielectric application has been formed on Si and SiC substrates using a combination of metal sputtering and thermal oxidation process. 2009-08 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/15537/1/FORMATION_OF_ZrO2_THIN_FILMS.pdf Tedi, Kurniawan (2009) Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997]. Masters thesis, Universiti Sains Malaysia.
spellingShingle TN1-997 Mining engineering. Metallurgy
Tedi, Kurniawan
Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997].
title Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997].
title_full Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997].
title_fullStr Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997].
title_full_unstemmed Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997].
title_short Formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [TN1-997].
title_sort formation of zro2 thin films by thermal oxidation of sputtered zr on si and sic substrates [tn1-997].
topic TN1-997 Mining engineering. Metallurgy
url http://eprints.usm.my/15537/
http://eprints.usm.my/15537/1/FORMATION_OF_ZrO2_THIN_FILMS.pdf