Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.

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Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.

Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) was simulated by using ISETCAD software with varying substrate type, gate length and source drain resistances.

Bibliographic Details
Main Authors:	Thahab, S M, Abu Hassan, H., Hassan, Z.
Format:	Conference or Workshop Item
Language:	English
Published:	2007
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/14835/ http://eprints.usm.my/14835/1/paper10.pdf

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