Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.

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Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.

High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE).

Bibliographic Details
Main Authors:	L, S Chuah, Hassan, Z, Abu Hassan, H
Format:	Conference or Workshop Item
Language:	English
Published:	2007
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/14830/ http://eprints.usm.my/14830/1/paper6.pdf

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