The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.

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The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.

In this paper, we present the study of the electrical, structural and optical properties of p-type GaN grown on sapphire by RF plasma-assisted molecular beam epitaxy (RF-MBE).

Bibliographic Details
Main Authors:	C, W Chin, Hassan, Z., F, K Yam
Format:	Conference or Workshop Item
Language:	English
Published:	2007
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/14827/ http://eprints.usm.my/14827/1/paper4.pdf

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