Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC.

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Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC.

The excellent properties of SiC have led to the usage of this material as a substrate for high power, high temperature, and high frequency metal-oxide-semiconductor (MOS)-based device applications [1,2,3].

Bibliographic Details
Main Authors:	Jo, Lene Tan, Kuan, Yew Cheong, Rusli, Rusli
Format:	Conference or Workshop Item
Language:	English
Published:	2007
Subjects:	TN1-997 Mining engineering. Metallurgy
Online Access:	http://eprints.usm.my/13614/ http://eprints.usm.my/13614/1/Physical_characteristics.pdf

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