Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC.
The excellent properties of SiC have led to the usage of this material as a substrate for high power, high temperature, and high frequency metal-oxide-semiconductor (MOS)-based device applications [1,2,3].
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2007
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| Subjects: | |
| Online Access: | http://eprints.usm.my/13614/ http://eprints.usm.my/13614/1/Physical_characteristics.pdf |
| _version_ | 1848871801627607040 |
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| author | Jo, Lene Tan Kuan, Yew Cheong Rusli, Rusli |
| author_facet | Jo, Lene Tan Kuan, Yew Cheong Rusli, Rusli |
| author_sort | Jo, Lene Tan |
| building | USM Institutional Repository |
| collection | Online Access |
| description | The excellent properties of SiC have led to the usage of this material as a substrate for high power, high temperature, and high frequency metal-oxide-semiconductor (MOS)-based device applications [1,2,3]. |
| first_indexed | 2025-11-15T15:45:51Z |
| format | Conference or Workshop Item |
| id | usm-13614 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T15:45:51Z |
| publishDate | 2007 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-136142013-07-13T05:21:14Z http://eprints.usm.my/13614/ Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC. Jo, Lene Tan Kuan, Yew Cheong Rusli, Rusli TN1-997 Mining engineering. Metallurgy The excellent properties of SiC have led to the usage of this material as a substrate for high power, high temperature, and high frequency metal-oxide-semiconductor (MOS)-based device applications [1,2,3]. 2007 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/13614/1/Physical_characteristics.pdf Jo, Lene Tan and Kuan, Yew Cheong and Rusli, Rusli (2007) Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC. In: International Conference Silicon Carbide and Related Materials 2007 (ICSCRM2007), 14 – 19 October 2007, Otsu Prince Hotel Convention Hall, Lake Biwa Resort, Otsu Japan. |
| spellingShingle | TN1-997 Mining engineering. Metallurgy Jo, Lene Tan Kuan, Yew Cheong Rusli, Rusli Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC. |
| title | Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC. |
| title_full | Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC. |
| title_fullStr | Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC. |
| title_full_unstemmed | Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC. |
| title_short | Physical Characteristics Of Sol-gel Derived SiO2 Thick Film on 4H-SiC. |
| title_sort | physical characteristics of sol-gel derived sio2 thick film on 4h-sic. |
| topic | TN1-997 Mining engineering. Metallurgy |
| url | http://eprints.usm.my/13614/ http://eprints.usm.my/13614/1/Physical_characteristics.pdf |