Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC.

Metal-Oxide-Semiconductor FETs using 4H-SiC have been investigated intensively because 4H-SiC semiconductor has excellent physical properties for power-device applications.

Bibliographic Details
Main Authors: Jeong, Hyun Moon, Kuan, Yew Cheong, Ho, Keun Song, Jeong, Hyuk Yim, Myeong, Suk Oh, Jong, Ho Lee, Bahng, Wook, Nam, Kyun Kim, Hyeong, Joon Kim
Format: Conference or Workshop Item
Language:English
Published: 2007
Subjects:
Online Access:http://eprints.usm.my/13610/
http://eprints.usm.my/13610/1/Effect_of_nitric.pdf
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author Jeong, Hyun Moon
Kuan, Yew Cheong
Ho, Keun Song
Jeong, Hyuk Yim
Myeong, Suk Oh
Jong, Ho Lee
Bahng, Wook
Nam, Kyun Kim
Hyeong, Joon Kim
author_facet Jeong, Hyun Moon
Kuan, Yew Cheong
Ho, Keun Song
Jeong, Hyuk Yim
Myeong, Suk Oh
Jong, Ho Lee
Bahng, Wook
Nam, Kyun Kim
Hyeong, Joon Kim
author_sort Jeong, Hyun Moon
building USM Institutional Repository
collection Online Access
description Metal-Oxide-Semiconductor FETs using 4H-SiC have been investigated intensively because 4H-SiC semiconductor has excellent physical properties for power-device applications.
first_indexed 2025-11-15T15:45:50Z
format Conference or Workshop Item
id usm-13610
institution Universiti Sains Malaysia
institution_category Local University
language English
last_indexed 2025-11-15T15:45:50Z
publishDate 2007
recordtype eprints
repository_type Digital Repository
spelling usm-136102013-07-13T05:21:09Z http://eprints.usm.my/13610/ Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC. Jeong, Hyun Moon Kuan, Yew Cheong Ho, Keun Song Jeong, Hyuk Yim Myeong, Suk Oh Jong, Ho Lee Bahng, Wook Nam, Kyun Kim Hyeong, Joon Kim TN1-997 Mining engineering. Metallurgy Metal-Oxide-Semiconductor FETs using 4H-SiC have been investigated intensively because 4H-SiC semiconductor has excellent physical properties for power-device applications. 2007 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/13610/1/Effect_of_nitric.pdf Jeong, Hyun Moon and Kuan, Yew Cheong and Ho, Keun Song and Jeong, Hyuk Yim and Myeong, Suk Oh and Jong, Ho Lee and Bahng, Wook and Nam, Kyun Kim and Hyeong, Joon Kim (2007) Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC. In: International Conference Silicon Carbide and Related Materials 2007 (ICSCRM2007), 14 – 19 October 2007, Otsu Prince Hotel Convention Hall, Lake Biwa Resort, Otsu Japan.
spellingShingle TN1-997 Mining engineering. Metallurgy
Jeong, Hyun Moon
Kuan, Yew Cheong
Ho, Keun Song
Jeong, Hyuk Yim
Myeong, Suk Oh
Jong, Ho Lee
Bahng, Wook
Nam, Kyun Kim
Hyeong, Joon Kim
Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC.
title Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC.
title_full Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC.
title_fullStr Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC.
title_full_unstemmed Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC.
title_short Effect Of Nitric-Oxide Post-Oxidation Annealing On High-Temperature Oxidized 4H SiC.
title_sort effect of nitric-oxide post-oxidation annealing on high-temperature oxidized 4h sic.
topic TN1-997 Mining engineering. Metallurgy
url http://eprints.usm.my/13610/
http://eprints.usm.my/13610/1/Effect_of_nitric.pdf