Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN

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Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN

In this work, we investigate the thermal stability and surface morphology of Ti metal contact on unintentionally doped n-type aluminum gallium nitride (AIGaN). Different annealing temperatures (400C - 800C) and durations (1-30 minutes) are investigated, as thermally stable metal-semiconductor contac...

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Bibliographic Details
Main Authors:	Hassan, Z., Yam, F. K., Lee, Y. C., Othman, S.
Format:	Conference or Workshop Item
Language:	English
Published:	2005
Subjects:	QC Physics
Online Access:	http://eprints.usm.my/133/ http://eprints.usm.my/133/1/Effects_Of_Post_Annealing_Treatments_On_The_Characteristics_Of_Ohmic_Contacts_On_n_Type_AIGaN.pdf

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