Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN
In this work, we investigate the thermal stability and surface morphology of Ti metal contact on unintentionally doped n-type aluminum gallium nitride (AIGaN). Different annealing temperatures (400C - 800C) and durations (1-30 minutes) are investigated, as thermally stable metal-semiconductor contac...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2005
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| Online Access: | http://eprints.usm.my/133/ http://eprints.usm.my/133/1/Effects_Of_Post_Annealing_Treatments_On_The_Characteristics_Of_Ohmic_Contacts_On_n_Type_AIGaN.pdf |
| _version_ | 1848868343956635648 |
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| author | Hassan, Z. Yam, F. K. Lee, Y. C. Othman, S. |
| author_facet | Hassan, Z. Yam, F. K. Lee, Y. C. Othman, S. |
| author_sort | Hassan, Z. |
| building | USM Institutional Repository |
| collection | Online Access |
| description | In this work, we investigate the thermal stability and surface morphology of Ti metal contact on unintentionally doped n-type aluminum gallium nitride (AIGaN). Different annealing temperatures (400C - 800C) and durations (1-30 minutes) are investigated, as thermally stable metal-semiconductor contacts are essential for high quality devices. Cryogenic quenching after heat treatment is also performed to determine the effects of this treatment on the characteristics of the contacts. Specific contact resistivity, Pc (SCR) determined using transmission line method (TLM) and scanning electron microscopy (SEM) measurements are carried out to be as-deposited, annealed (A), and annealed-and-cryogenically (A=C) treated contacts where the electrical behavior and the surface morphology of eahc of these conditions are compared. |
| first_indexed | 2025-11-15T14:50:53Z |
| format | Conference or Workshop Item |
| id | usm-133 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T14:50:53Z |
| publishDate | 2005 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-1332023-11-13T21:56:13Z http://eprints.usm.my/133/ Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN Hassan, Z. Yam, F. K. Lee, Y. C. Othman, S. QC Physics In this work, we investigate the thermal stability and surface morphology of Ti metal contact on unintentionally doped n-type aluminum gallium nitride (AIGaN). Different annealing temperatures (400C - 800C) and durations (1-30 minutes) are investigated, as thermally stable metal-semiconductor contacts are essential for high quality devices. Cryogenic quenching after heat treatment is also performed to determine the effects of this treatment on the characteristics of the contacts. Specific contact resistivity, Pc (SCR) determined using transmission line method (TLM) and scanning electron microscopy (SEM) measurements are carried out to be as-deposited, annealed (A), and annealed-and-cryogenically (A=C) treated contacts where the electrical behavior and the surface morphology of eahc of these conditions are compared. 2005 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/133/1/Effects_Of_Post_Annealing_Treatments_On_The_Characteristics_Of_Ohmic_Contacts_On_n_Type_AIGaN.pdf Hassan, Z. and Yam, F. K. and Lee, Y. C. and Othman, S. (2005) Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN. In: Light-Emitting Diodes: Research, Manufacturing, and Applications IX. |
| spellingShingle | QC Physics Hassan, Z. Yam, F. K. Lee, Y. C. Othman, S. Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN |
| title | Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN |
| title_full | Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN |
| title_fullStr | Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN |
| title_full_unstemmed | Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN |
| title_short | Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN |
| title_sort | effects of post annealing treatment on the characteristics of ohmic contacts on n-type aigan |
| topic | QC Physics |
| url | http://eprints.usm.my/133/ http://eprints.usm.my/133/1/Effects_Of_Post_Annealing_Treatments_On_The_Characteristics_Of_Ohmic_Contacts_On_n_Type_AIGaN.pdf |