A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
High quality Gan films are usually produced at high growth temperatures (> 1OOO°C) with the use of substrates such as sapphire (Ah03) or silicon carbide (SiC).Therefore, for a low production cost purpose, there has been a growing interest in producing lower growth temperatures Gan films as well a...
| Main Authors: | , , , , |
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| Format: | Monograph |
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Universiti Sains Malaysia
2000
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| Online Access: | http://eprints.usm.my/10768/ |
| _version_ | 1848871055982067712 |
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| author | Y, C.Lee Z., Hassan F., K. Yam Abdullah, M. J. Ibrahim, K. |
| author_facet | Y, C.Lee Z., Hassan F., K. Yam Abdullah, M. J. Ibrahim, K. |
| author_sort | Y, C.Lee |
| building | USM Institutional Repository |
| collection | Online Access |
| description | High quality Gan films are usually produced at high growth temperatures (> 1OOO°C) with the use of substrates such as sapphire (Ah03) or silicon carbide (SiC).Therefore, for a low production cost purpose, there has been a growing interest in producing lower growth temperatures Gan films as well as Gan based devices with low cost substrates such as silicon.
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| first_indexed | 2025-11-15T15:34:00Z |
| format | Monograph |
| id | usm-10768 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-15T15:34:00Z |
| publishDate | 2000 |
| publisher | Universiti Sains Malaysia |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-107682017-09-14T04:29:09Z http://eprints.usm.my/10768/ A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon. Y, C.Lee Z., Hassan F., K. Yam Abdullah, M. J. Ibrahim, K. QC1-999 Physics High quality Gan films are usually produced at high growth temperatures (> 1OOO°C) with the use of substrates such as sapphire (Ah03) or silicon carbide (SiC).Therefore, for a low production cost purpose, there has been a growing interest in producing lower growth temperatures Gan films as well as Gan based devices with low cost substrates such as silicon. Universiti Sains Malaysia 2000 Monograph NonPeerReviewed Y, C.Lee and Z., Hassan and F., K. Yam and Abdullah, M. J. and Ibrahim, K. (2000) A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon. Working Paper. Universiti Sains Malaysia . |
| spellingShingle | QC1-999 Physics Y, C.Lee Z., Hassan F., K. Yam Abdullah, M. J. Ibrahim, K. A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon. |
| title | A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
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| title_full | A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
|
| title_fullStr | A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
|
| title_full_unstemmed | A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
|
| title_short | A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
|
| title_sort | comparative study of the electrical characteristics of metal-semiconductor-metal (msm) photodiodes based on gan grown on silicon. |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/10768/ |