Fabrication Of Submicron HEMT Mushroom Gate Structure Using Electron Beam Lithography And Its Characterization

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Fabrication Of Submicron HEMT Mushroom Gate Structure Using Electron Beam Lithography And Its Characterization

Dalam kajian ini, struktur get HEMT dengan gatelength bersaiz 200 nm dan berprofil cendawan telah direkabentuk, difabrikasi dan dicirikan. In this research study, 200 nm gatelength HEMT gate structures with mushroom-shaped profile have been designed, fabricated and characterized.

Bibliographic Details
Main Author:	Yusof, Ashaari
Format:	Thesis
Language:	English
Published:	2008
Subjects:	TK7800-8360 Electronics
Online Access:	http://eprints.usm.my/10407/ http://eprints.usm.my/10407/1/FABRICATION_OF_SUBMICRON_HEMT_MUSHROOM_GATE.pdf

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