A self-rectifying memristor model for simulation and ReRAM applications
In this paper, a self-rectifying memristor (SRM) model is proposed for memristive circuit simulations. This model is based on the behavior of voltage controlled, bipolar memristors that exhibit diode-like rectification behavior when reverse biased. Such unique feature can solve the sneak path proble...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Institute of Advanced Engineering and Science
2020
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| Online Access: | http://psasir.upm.edu.my/id/eprint/87682/ http://psasir.upm.edu.my/id/eprint/87682/1/ABSTRACT.pdf |
| _version_ | 1848860481313308672 |
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| author | Sabah, Sinan Sulaiman, Nasri |
| author_facet | Sabah, Sinan Sulaiman, Nasri |
| author_sort | Sabah, Sinan |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | In this paper, a self-rectifying memristor (SRM) model is proposed for memristive circuit simulations. This model is based on the behavior of voltage controlled, bipolar memristors that exhibit diode-like rectification behavior when reverse biased. Such unique feature can solve the sneak path problem in crossbar memristive memory structures without requiring additional cell selectors. The results show that the proposed model satisfies the basic memristor’s i-v characteristics and fits many different memristor devices adequately. The proposed model is implemented in Verilog-A so that it is conveniently incorporated into various memristor applications with different circuit simulators |
| first_indexed | 2025-11-15T12:45:55Z |
| format | Article |
| id | upm-87682 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T12:45:55Z |
| publishDate | 2020 |
| publisher | Institute of Advanced Engineering and Science |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-876822022-07-06T04:45:32Z http://psasir.upm.edu.my/id/eprint/87682/ A self-rectifying memristor model for simulation and ReRAM applications Sabah, Sinan Sulaiman, Nasri In this paper, a self-rectifying memristor (SRM) model is proposed for memristive circuit simulations. This model is based on the behavior of voltage controlled, bipolar memristors that exhibit diode-like rectification behavior when reverse biased. Such unique feature can solve the sneak path problem in crossbar memristive memory structures without requiring additional cell selectors. The results show that the proposed model satisfies the basic memristor’s i-v characteristics and fits many different memristor devices adequately. The proposed model is implemented in Verilog-A so that it is conveniently incorporated into various memristor applications with different circuit simulators Institute of Advanced Engineering and Science 2020 Article PeerReviewed text en http://psasir.upm.edu.my/id/eprint/87682/1/ABSTRACT.pdf Sabah, Sinan and Sulaiman, Nasri (2020) A self-rectifying memristor model for simulation and ReRAM applications. Indonesian Journal of Electrical Engineering and Computer Science, 19 (3). 1204 - 1209. ISSN 2502-4752 https://ijeecs.iaescore.com/index.php/IJEECS/article/view/22408 10.11591/ijeecs.v19.i3 |
| spellingShingle | Sabah, Sinan Sulaiman, Nasri A self-rectifying memristor model for simulation and ReRAM applications |
| title | A self-rectifying memristor model for simulation and ReRAM applications |
| title_full | A self-rectifying memristor model for simulation and ReRAM applications |
| title_fullStr | A self-rectifying memristor model for simulation and ReRAM applications |
| title_full_unstemmed | A self-rectifying memristor model for simulation and ReRAM applications |
| title_short | A self-rectifying memristor model for simulation and ReRAM applications |
| title_sort | self-rectifying memristor model for simulation and reram applications |
| url | http://psasir.upm.edu.my/id/eprint/87682/ http://psasir.upm.edu.my/id/eprint/87682/ http://psasir.upm.edu.my/id/eprint/87682/ http://psasir.upm.edu.my/id/eprint/87682/1/ABSTRACT.pdf |