High-performance nanoporous silicon-based photodetectors
A series of porous silicon (PSi) samples was prepared using photoelectrochemical etching (PECE) method with optimum current density of 45 mA/cm2. The as-prepared PSi samples were characterized to determine the influence of the etching time (15, 25 and 30 min) on their morphology and electrical prope...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2018
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| Online Access: | http://psasir.upm.edu.my/id/eprint/74510/ http://psasir.upm.edu.my/id/eprint/74510/1/High-performance%20nanoporous%20silicon-based%20photodetectors.pdf |
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| author | Thahe, Asaad Aldulimi Bakhtiar, Hazri Bidin, Noriah Hassan, Zainuriah Qaeed, Motahher A. Ramizy, Asmiet Talib, Zainal Abidin Ahmed, Naser Mahmoud Omar, Khalid Al-qaraghuli, Hasan Husham, Mohammed Allam, Nageh K. |
| author_facet | Thahe, Asaad Aldulimi Bakhtiar, Hazri Bidin, Noriah Hassan, Zainuriah Qaeed, Motahher A. Ramizy, Asmiet Talib, Zainal Abidin Ahmed, Naser Mahmoud Omar, Khalid Al-qaraghuli, Hasan Husham, Mohammed Allam, Nageh K. |
| author_sort | Thahe, Asaad Aldulimi |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | A series of porous silicon (PSi) samples was prepared using photoelectrochemical etching (PECE) method with optimum current density of 45 mA/cm2. The as-prepared PSi samples were characterized to determine the influence of the etching time (15, 25 and 30 min) on their morphology and electrical properties. The percentage of porosity was estimated via gravimetric analysis. The band gap of the fabricated PSi was ≈2.22 eV. Upon their use to fabricate metal-semiconductor-metal (MSM) ultraviolet photodetectors (UVPD), the fabricated PSi revealed excellent stability and reliability under repetitive shots at 530 nm. Furthermore, very fast rise time (≈0.28 s) was obtained at a bias of 1 V under visible light (530 nm) illumination. |
| first_indexed | 2025-11-15T11:58:42Z |
| format | Article |
| id | upm-74510 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T11:58:42Z |
| publishDate | 2018 |
| publisher | Elsevier |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-745102019-12-05T04:16:34Z http://psasir.upm.edu.my/id/eprint/74510/ High-performance nanoporous silicon-based photodetectors Thahe, Asaad Aldulimi Bakhtiar, Hazri Bidin, Noriah Hassan, Zainuriah Qaeed, Motahher A. Ramizy, Asmiet Talib, Zainal Abidin Ahmed, Naser Mahmoud Omar, Khalid Al-qaraghuli, Hasan Husham, Mohammed Allam, Nageh K. A series of porous silicon (PSi) samples was prepared using photoelectrochemical etching (PECE) method with optimum current density of 45 mA/cm2. The as-prepared PSi samples were characterized to determine the influence of the etching time (15, 25 and 30 min) on their morphology and electrical properties. The percentage of porosity was estimated via gravimetric analysis. The band gap of the fabricated PSi was ≈2.22 eV. Upon their use to fabricate metal-semiconductor-metal (MSM) ultraviolet photodetectors (UVPD), the fabricated PSi revealed excellent stability and reliability under repetitive shots at 530 nm. Furthermore, very fast rise time (≈0.28 s) was obtained at a bias of 1 V under visible light (530 nm) illumination. Elsevier 2018-09 Article PeerReviewed text en http://psasir.upm.edu.my/id/eprint/74510/1/High-performance%20nanoporous%20silicon-based%20photodetectors.pdf Thahe, Asaad Aldulimi and Bakhtiar, Hazri and Bidin, Noriah and Hassan, Zainuriah and Qaeed, Motahher A. and Ramizy, Asmiet and Talib, Zainal Abidin and Ahmed, Naser Mahmoud and Omar, Khalid and Al-qaraghuli, Hasan and Husham, Mohammed and Allam, Nageh K. (2018) High-performance nanoporous silicon-based photodetectors. Optik, 168 (2018). 424 - 431. ISSN 0030-4026; ESSN: 1618-1336 https://doi.org/10.1016/j.ijleo.2018.04.084 |
| spellingShingle | Thahe, Asaad Aldulimi Bakhtiar, Hazri Bidin, Noriah Hassan, Zainuriah Qaeed, Motahher A. Ramizy, Asmiet Talib, Zainal Abidin Ahmed, Naser Mahmoud Omar, Khalid Al-qaraghuli, Hasan Husham, Mohammed Allam, Nageh K. High-performance nanoporous silicon-based photodetectors |
| title | High-performance nanoporous silicon-based photodetectors |
| title_full | High-performance nanoporous silicon-based photodetectors |
| title_fullStr | High-performance nanoporous silicon-based photodetectors |
| title_full_unstemmed | High-performance nanoporous silicon-based photodetectors |
| title_short | High-performance nanoporous silicon-based photodetectors |
| title_sort | high-performance nanoporous silicon-based photodetectors |
| url | http://psasir.upm.edu.my/id/eprint/74510/ http://psasir.upm.edu.my/id/eprint/74510/ http://psasir.upm.edu.my/id/eprint/74510/1/High-performance%20nanoporous%20silicon-based%20photodetectors.pdf |