Photophysical performance of radio frequency sputtered Pt/n-PSi/ZnO NCs/Pt photovoltaic photodetectors
The effect of the annealing temperature on the photoelectrical properties of the nanoporous silicon/zinc oxide nanocrystallites-based (Pt/n-PSi/ZnO NCs/Pt) photodetector was investigated. Different morphologies of 3D ZnO were synthesized onto the n-PSi substrates via radio frequency (RF) sputtering...
| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2018
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| Online Access: | http://psasir.upm.edu.my/id/eprint/73488/ http://psasir.upm.edu.my/id/eprint/73488/1/ZNO.pdf |
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| author | Thahe, Asaad Aldulimi Bakhtiar, Hazri Ali, Basant A. Hassan, Z. Bidin, Nroiah Bououdina, Mohamed Qaeed, Motahher A. Talib, Zainal Abidin Al-Azawi, Mohammed A. Alqaraghuli, Hasan Uday, M. B. Ramizy, Asmiet Al-Ghamdi, M. S. Abubakar, Dauda Allamb, Nageh K. |
| author_facet | Thahe, Asaad Aldulimi Bakhtiar, Hazri Ali, Basant A. Hassan, Z. Bidin, Nroiah Bououdina, Mohamed Qaeed, Motahher A. Talib, Zainal Abidin Al-Azawi, Mohammed A. Alqaraghuli, Hasan Uday, M. B. Ramizy, Asmiet Al-Ghamdi, M. S. Abubakar, Dauda Allamb, Nageh K. |
| author_sort | Thahe, Asaad Aldulimi |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | The effect of the annealing temperature on the photoelectrical properties of the nanoporous silicon/zinc oxide nanocrystallites-based (Pt/n-PSi/ZnO NCs/Pt) photodetector was investigated. Different morphologies of 3D ZnO were synthesized onto the n-PSi substrates via radio frequency (RF) sputtering in the absence of a catalyst. The synthesis of ZnO NCs was controlled by varying the growth temperature between 600–700 °C and 800–900 °C. The effect of the synthesis temperature on the structural, morphological, and optical properties of the n-PSi/ZnO NCs was systematically studied using field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence spectroscopy (PL) techniques. The roughness was found to be dependent on the anodization current density. The optimal n-PSi/ZnO NCs-based metal-semiconductor-metal UV detector (MSM) was fabricated at 700 °C. The fabricated device showed a high sensitivity of 1007.14, an internal photoconductive gain of 11.07, and a responsivity of 5.99 A/W with a low dark current when illuminated with 380 nm light (1.55 mW/cm2) at +5 V bias voltage. In addition, the response and recovery times were determined to be 0.34 and 0.22 s, respectively. This approach offers a cost-effective substrate and simple synthesis method to improve the growth of the n-PSi/ZnO NCs and demonstrates the successful fabrication of nanoscale photodetectors with potential application in nano-optics devices. |
| first_indexed | 2025-11-15T11:55:06Z |
| format | Article |
| id | upm-73488 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T11:55:06Z |
| publishDate | 2018 |
| publisher | Elsevier |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-734882021-07-21T10:34:42Z http://psasir.upm.edu.my/id/eprint/73488/ Photophysical performance of radio frequency sputtered Pt/n-PSi/ZnO NCs/Pt photovoltaic photodetectors Thahe, Asaad Aldulimi Bakhtiar, Hazri Ali, Basant A. Hassan, Z. Bidin, Nroiah Bououdina, Mohamed Qaeed, Motahher A. Talib, Zainal Abidin Al-Azawi, Mohammed A. Alqaraghuli, Hasan Uday, M. B. Ramizy, Asmiet Al-Ghamdi, M. S. Abubakar, Dauda Allamb, Nageh K. The effect of the annealing temperature on the photoelectrical properties of the nanoporous silicon/zinc oxide nanocrystallites-based (Pt/n-PSi/ZnO NCs/Pt) photodetector was investigated. Different morphologies of 3D ZnO were synthesized onto the n-PSi substrates via radio frequency (RF) sputtering in the absence of a catalyst. The synthesis of ZnO NCs was controlled by varying the growth temperature between 600–700 °C and 800–900 °C. The effect of the synthesis temperature on the structural, morphological, and optical properties of the n-PSi/ZnO NCs was systematically studied using field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence spectroscopy (PL) techniques. The roughness was found to be dependent on the anodization current density. The optimal n-PSi/ZnO NCs-based metal-semiconductor-metal UV detector (MSM) was fabricated at 700 °C. The fabricated device showed a high sensitivity of 1007.14, an internal photoconductive gain of 11.07, and a responsivity of 5.99 A/W with a low dark current when illuminated with 380 nm light (1.55 mW/cm2) at +5 V bias voltage. In addition, the response and recovery times were determined to be 0.34 and 0.22 s, respectively. This approach offers a cost-effective substrate and simple synthesis method to improve the growth of the n-PSi/ZnO NCs and demonstrates the successful fabrication of nanoscale photodetectors with potential application in nano-optics devices. Elsevier 2018-10 Article PeerReviewed text en http://psasir.upm.edu.my/id/eprint/73488/1/ZNO.pdf Thahe, Asaad Aldulimi and Bakhtiar, Hazri and Ali, Basant A. and Hassan, Z. and Bidin, Nroiah and Bououdina, Mohamed and Qaeed, Motahher A. and Talib, Zainal Abidin and Al-Azawi, Mohammed A. and Alqaraghuli, Hasan and Uday, M. B. and Ramizy, Asmiet and Al-Ghamdi, M. S. and Abubakar, Dauda and Allamb, Nageh K. (2018) Photophysical performance of radio frequency sputtered Pt/n-PSi/ZnO NCs/Pt photovoltaic photodetectors. Optical Materials, 84. 830 - 842. ISSN 0925-3467 https://www.sciencedirect.com/science/article/pii/S0925346718305652 10.1016/j.optmat.2018.08.027 |
| spellingShingle | Thahe, Asaad Aldulimi Bakhtiar, Hazri Ali, Basant A. Hassan, Z. Bidin, Nroiah Bououdina, Mohamed Qaeed, Motahher A. Talib, Zainal Abidin Al-Azawi, Mohammed A. Alqaraghuli, Hasan Uday, M. B. Ramizy, Asmiet Al-Ghamdi, M. S. Abubakar, Dauda Allamb, Nageh K. Photophysical performance of radio frequency sputtered Pt/n-PSi/ZnO NCs/Pt photovoltaic photodetectors |
| title | Photophysical performance of radio frequency sputtered Pt/n-PSi/ZnO NCs/Pt photovoltaic photodetectors |
| title_full | Photophysical performance of radio frequency sputtered Pt/n-PSi/ZnO NCs/Pt photovoltaic photodetectors |
| title_fullStr | Photophysical performance of radio frequency sputtered Pt/n-PSi/ZnO NCs/Pt photovoltaic photodetectors |
| title_full_unstemmed | Photophysical performance of radio frequency sputtered Pt/n-PSi/ZnO NCs/Pt photovoltaic photodetectors |
| title_short | Photophysical performance of radio frequency sputtered Pt/n-PSi/ZnO NCs/Pt photovoltaic photodetectors |
| title_sort | photophysical performance of radio frequency sputtered pt/n-psi/zno ncs/pt photovoltaic photodetectors |
| url | http://psasir.upm.edu.my/id/eprint/73488/ http://psasir.upm.edu.my/id/eprint/73488/ http://psasir.upm.edu.my/id/eprint/73488/ http://psasir.upm.edu.my/id/eprint/73488/1/ZNO.pdf |