Mat Sharif, K. A., Zulkifli, M. I., Muhamad Yassin, S. Z., Tamchek, N., Aljamimi, S. M., Yusoff, A., . . . Abdul Rashid, H. A. (2013). Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process. IEEE.
Chicago Style (17th ed.) CitationMat Sharif, Khairul Anuar, Mohd Imran Zulkifli, Shahrin Zen Muhamad Yassin, Nizam Tamchek, Salah Mohammed Aljamimi, A. Yusoff, Yusoff Mohd Amin, Siti Shafiqah S. A., and Hairul Azhar Abdul Rashid. Effect of GeCl4/SiCl4 Flow Ratio on Germanium Incorporation in MCVD Process. IEEE, 2013.
MLA (9th ed.) CitationMat Sharif, Khairul Anuar, et al. Effect of GeCl4/SiCl4 Flow Ratio on Germanium Incorporation in MCVD Process. IEEE, 2013.
Warning: These citations may not always be 100% accurate.