Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography

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Field effect in silicon nanostructure fabricated by atomic force microscopy nano lithography

The electrical property of silicon nano-structure is highly considered in nanoelectronics. In this context we investigate the field effect in nanostructure Junctionless p-type silicon nanowire transistor under the lateral gate voltage. The device fabricated by means of Atomic Force microscopy (AFM)...

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Bibliographic Details
Main Authors:	Dehzangi, Arash, Larki, Farhad, Saion, Elias, Hutagalung, Sabar D., Hamidon, Mohd Nizar, Hassan, Jumiah
Format:	Conference or Workshop Item
Language:	English
Published:	IEEE 2011
Online Access:	http://psasir.upm.edu.my/id/eprint/68199/ http://psasir.upm.edu.my/id/eprint/68199/1/Field%20effect%20in%20silicon%20nanostructure%20fabricated%20by%20atomic%20force%20microscopy%20nano%20lithography.pdf

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