Sneak path current tolerant resistive crossbar array structures based on self-rectifying memristor model for memory applications

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Sneak path current tolerant resistive crossbar array structures based on self-rectifying memristor model for memory applications

The demands for continuous miniaturization of electronic devices and circuits have kept on increasing to fulfill consumer needs. However, today’s conventional technologies are facing major challenges related to scaling and design issues. Nanoscale memristive devices are one of the promising futur...

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Bibliographic Details
Main Author:	Mahmood, Sinan Sabah
Format:	Thesis
Language:	English
Published:	2017
Subjects:	Memristors
Online Access:	http://psasir.upm.edu.my/id/eprint/67896/ http://psasir.upm.edu.my/id/eprint/67896/1/FK%202018%2029.pdf

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