Transfer free graphene growth on SiO2 substrate at 250 °C

Transfer free graphene growth on SiO2 substrate at 250 °C

Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO2 covered Si (SiO2/Si) substrate at 250 °C based on a solid-liquid-s...

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Bibliographic Details
Main Authors: Vishwakarma, Riteshkumar, Rosmi, Mohamad Saufi, Takahashi, Kazunari, Wakamatsu, Yuji, Yaakob, Yazid, Araby, Mona Ibrahim, Kalita, Golap, Kitazawa, Masashi, Tanemura, Masaki
Format: Article
Language:English
Published: Nature Publishing Group 2017
Online Access:http://psasir.upm.edu.my/id/eprint/63600/
http://psasir.upm.edu.my/id/eprint/63600/1/Transfer%20free%20graphene%20growth%20on%20SiO2%20substrate%20at%20250%E2%80%89%C2%B0C.pdf

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