Transfer free graphene growth on SiO2 substrate at 250 °C
Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO2 covered Si (SiO2/Si) substrate at 250 °C based on a solid-liquid-s...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Publishing Group
2017
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| Online Access: | http://psasir.upm.edu.my/id/eprint/63600/ http://psasir.upm.edu.my/id/eprint/63600/1/Transfer%20free%20graphene%20growth%20on%20SiO2%20substrate%20at%20250%E2%80%89%C2%B0C.pdf |
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| author | Vishwakarma, Riteshkumar Rosmi, Mohamad Saufi Takahashi, Kazunari Wakamatsu, Yuji Yaakob, Yazid Araby, Mona Ibrahim Kalita, Golap Kitazawa, Masashi Tanemura, Masaki |
| author_facet | Vishwakarma, Riteshkumar Rosmi, Mohamad Saufi Takahashi, Kazunari Wakamatsu, Yuji Yaakob, Yazid Araby, Mona Ibrahim Kalita, Golap Kitazawa, Masashi Tanemura, Masaki |
| author_sort | Vishwakarma, Riteshkumar |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO2 covered Si (SiO2/Si) substrate at 250 °C based on a solid-liquid-solid reaction. The key to this approach is the catalyst metal, which is not popular for graphene growth by chemical vapor deposition. A catalyst metal film of 500 nm thick was deposited onto an amorphous C (50 nm thick) coated SiO2/Si substrate. The sample was then annealed at 250 °C under vacuum condition. Raman spectra measured after the removal of the catalyst by chemical etching showed intense G and 2D peaks together with a small D and intense SiO2 related peaks, confirming the transfer free growth of multilayer graphene on SiO2/Si. The domain size of the graphene confirmed by optical microscope and atomic force microscope was about 5 μm in an average. Thus, this approach will open up a new route for transfer free graphene growth at low temperatures. |
| first_indexed | 2025-11-15T11:16:04Z |
| format | Article |
| id | upm-63600 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T11:16:04Z |
| publishDate | 2017 |
| publisher | Nature Publishing Group |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-636002018-11-07T03:31:02Z http://psasir.upm.edu.my/id/eprint/63600/ Transfer free graphene growth on SiO2 substrate at 250 °C Vishwakarma, Riteshkumar Rosmi, Mohamad Saufi Takahashi, Kazunari Wakamatsu, Yuji Yaakob, Yazid Araby, Mona Ibrahim Kalita, Golap Kitazawa, Masashi Tanemura, Masaki Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO2 covered Si (SiO2/Si) substrate at 250 °C based on a solid-liquid-solid reaction. The key to this approach is the catalyst metal, which is not popular for graphene growth by chemical vapor deposition. A catalyst metal film of 500 nm thick was deposited onto an amorphous C (50 nm thick) coated SiO2/Si substrate. The sample was then annealed at 250 °C under vacuum condition. Raman spectra measured after the removal of the catalyst by chemical etching showed intense G and 2D peaks together with a small D and intense SiO2 related peaks, confirming the transfer free growth of multilayer graphene on SiO2/Si. The domain size of the graphene confirmed by optical microscope and atomic force microscope was about 5 μm in an average. Thus, this approach will open up a new route for transfer free graphene growth at low temperatures. Nature Publishing Group 2017-03 Article PeerReviewed text en http://psasir.upm.edu.my/id/eprint/63600/1/Transfer%20free%20graphene%20growth%20on%20SiO2%20substrate%20at%20250%E2%80%89%C2%B0C.pdf Vishwakarma, Riteshkumar and Rosmi, Mohamad Saufi and Takahashi, Kazunari and Wakamatsu, Yuji and Yaakob, Yazid and Araby, Mona Ibrahim and Kalita, Golap and Kitazawa, Masashi and Tanemura, Masaki (2017) Transfer free graphene growth on SiO2 substrate at 250 °C. Scientific Reports, 7. art. no. 43756. pp. 1-8. ISSN 2045-2322 https://www.nature.com/articles/srep43756 10.1038/srep43756 |
| spellingShingle | Vishwakarma, Riteshkumar Rosmi, Mohamad Saufi Takahashi, Kazunari Wakamatsu, Yuji Yaakob, Yazid Araby, Mona Ibrahim Kalita, Golap Kitazawa, Masashi Tanemura, Masaki Transfer free graphene growth on SiO2 substrate at 250 °C |
| title | Transfer free graphene growth on SiO2 substrate at 250 °C |
| title_full | Transfer free graphene growth on SiO2 substrate at 250 °C |
| title_fullStr | Transfer free graphene growth on SiO2 substrate at 250 °C |
| title_full_unstemmed | Transfer free graphene growth on SiO2 substrate at 250 °C |
| title_short | Transfer free graphene growth on SiO2 substrate at 250 °C |
| title_sort | transfer free graphene growth on sio2 substrate at 250 °c |
| url | http://psasir.upm.edu.my/id/eprint/63600/ http://psasir.upm.edu.my/id/eprint/63600/ http://psasir.upm.edu.my/id/eprint/63600/ http://psasir.upm.edu.my/id/eprint/63600/1/Transfer%20free%20graphene%20growth%20on%20SiO2%20substrate%20at%20250%E2%80%89%C2%B0C.pdf |