Design Of 1K Asynchronous Static Random Access Memory Using 0.35 Micron Complementary Metal Oxide Semiconductor Technology

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Design Of 1K Asynchronous Static Random Access Memory Using 0.35 Micron Complementary Metal Oxide Semiconductor Technology

Static Random Access Memory (SRAM) is a high speed semiconductor memory which is widely used as cache memory in microprocessors and microcontrollers, telecommunication and networking devices. The SRAM operations are categorized into two main groups: asynchronous and synchronous. A synchronous SR...

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Bibliographic Details
Main Author:	Yeong, Tak Nging
Format:	Thesis
Language:	English
Published:	2005
Subjects:	Statics Oxide
Online Access:	http://psasir.upm.edu.my/id/eprint/6070/ http://psasir.upm.edu.my/id/eprint/6070/1/FK_2005_54.pdf

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